upa2782gr Renesas Electronics Corporation., upa2782gr Datasheet - Page 3

• Manufacturer Part Number: upa2782gr
• Description: Switching N-channel Power Mosfet/schottky Barrier Diode
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
0.01
100
120
100
0.1
80
60
40
20
10
0
1
0.01
FORWARD BIAS SAFE OPERATING AREA
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Single pulse
Mounted on ceramic substrate of
1200 mm
I
I
D(pulse)
D(DC)
25
V
(at V
R
Power Dissipation Limited
DS
DS(on)
T
2
A
x 2.2 mm
- Drain to Source Voltage - V
0.1
GS
- Ambient Temperature - C
1000
50
Limited
= 10 V)
100
0.1
10
1
1 m
100 ms
75
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (MOSFET)
DC
1
100
10 m
125
10
A
PW = 100 s
= 25°C. All terminals are connected.)
150
1 ms
10 ms
100 m
PW - Pulse Width - s
100
Data Sheet G16421EJ1V0DS
175
Mounted on ceramic substrate of 1200 mm
Single pulse
1
2.8
2.4
1.6
1.2
0.8
0.4
10
2
0
R
th(ch-A)
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
MOSFET
SCHOTTKY
= 62.5°C/W
20
T
A
- Ambient Temperature - C
100
40
2
60
× 2.2 mm
Mounted on ceramic substrate of
1200 mm
80
1000
2
x 2.2 mm
100
120
PA2782GR
140
160
3