upa2782gr Renesas Electronics Corporation., upa2782gr Datasheet - Page 5

• Manufacturer Part Number: upa2782gr
• Description: Switching N-channel Power Mosfet/schottky Barrier Diode
• Manufacturer: Renesas Electronics Corporation.

1000
100
100
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
10
40
35
30
25
20
15
10
1
1
5
0
- 50
0.1
0
Pulsed
SWITCHING CHARACTERISTICS
V
0.2
F(S-D)
T
ch
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
- Channel Temperature - °C
0
- Source to Drain Voltage - V
I
D
0.4
1
- Drain Current - A
125° C
0.6
V
50
GS
= 4.0 V
10
0.8
t
t
t
t
d(off)
d(on)
f
r
10 V
100
V
V
R
T
V
Pulsed
DD
GS
G
4.5 V
A
G S
= 10
= 25°C
= 15 V
= 10 V
1
= 0 V
100
Data Sheet G16421EJ1V0DS
150
1.2
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
100000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
30
25
20
15
10
10000
5
0
100
1000
0.01
10
100
0
0.1
10
0.01
1
- 50
V
DS
V
SOURCE TO DRAIN DIODE
REVERSE CURRENT
Q
DS
2
- Drain to Source Voltage - V
G
T
0.1
= 30 V
- Gate Charge - nC
j
0
- Junction Temperature - ° C
V
DD
= 24 V
4
15 V
24 V
6 V
V
1
DS
50
6
PA2782GR
10
I
D
100
V
= 11 A
V
f = 1 M H z
GS
G S
= 0 V
C
C
C
8
iss
oss
rss
6
5
4
3
2
1
0
100
150
5