upa2452tl Renesas Electronics Corporation., upa2452tl Datasheet

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upa2452tl

Manufacturer Part Number
upa2452tl
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. G16272EJ1V0DS00 (1st edition)
Date Published October 2003 NS CP(K)
Printed in Japan
DESCRIPTION
directly by a 2.5 V power source.
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. Mounted on ceramic substrate of 50 cm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
• 2.5 V drive available
• Low on-state resistance
• Built-in G-S protection diode against ESD
The
This
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (2 units)
Total Power Dissipation (2 units)
Channel Temperature
Storage Temperature
R
R
R
R
DS(on)1
DS(on)2
DS(on)3
DS(on)4
µ
PART NUMBER
2. PW ≤ 10
3. Mounted on FR-4 board of 50 cm
µ
PA2452 is a switching device which can be driven
µ
PA2452 features a low on-state resistance and
PA2452TL
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
= 17.5 mΩ TYP. (V
= 18.5 mΩ TYP. (V
= 21.0 mΩ TYP. (V
= 25.0 mΩ TYP. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
µ
s, Duty Cycle ≤ 1%
Note1
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note2
DS
GS
GS
GS
GS
GS
= 0 V)
= 0 V)
= 4.5 V, I
= 4.0 V, I
= 3.1 V, I
= 2.5 V, I
6PIN HWSON (4521)
Note1
Note3
PACKAGE
D
D
D
D
I
= 4.0 A)
= 4.0 A)
= 4.0 A)
= 4.0 A)
A
I
D(pulse)
2
V
V
D(DC)
P
P
T
T
x 1.6 mm
GSS
DSS
= 25°C)
FOR SWITCHING
stg
T1
T2
ch
DATA SHEET
2
x 1.1 mm
−55 to +150
±12.0
±80.0
MOS FIELD EFFECT TRANSISTOR
24.0
±7.8
150
2.5
0.7
°C
°C
W
W
1
2
3
V
V
A
A
PACKAGE DRAWING (Unit: mm)
(0.15)
Each lead has same dimensions
1,2:
3:
7:
Source 1
Gate 1
Drain
7
(0.9)
4.4±0.1
5.0±0.1
(3.05)
Gate1
Gate
Protection
Diode
5,6:
4:
Source 2
Gate 2
EQUIVALENT CIRCUIT
µ
Source1
Drain1
PA2452
Body
Diode
6
5
4
(0.50)
Gate2
Gate
Protection
Diode
Source2
Drain2
Body
Diode
2003

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upa2452tl Summary of contents

Page 1

N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION µ The PA2452 is a switching device which can be driven directly by a 2.5 V power source. µ This PA2452 features a low on-state resistance and excellent switching characteristics, and is suitable for ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 150 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA 1000 µs R ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 Pulsed 0.4 0.8 1 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 Pulsed 2 3 100 T - Channel Temperature - ...

Page 6

When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding the following contents. If used exceeding recommended conditions, there is a possibility of causing failure of ...

Page 7

This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion applied to the device should become below 2000 characteristic of a device may be degraded and it may result in ...

Page 8

The information in this document is current as of October, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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