upa2452tl Renesas Electronics Corporation., upa2452tl Datasheet - Page 4
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upa2452tl
Manufacturer Part Number
upa2452tl
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2452TL.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
upa2452tl-E1
Manufacturer:
NEC
Quantity:
3 568
Part Number:
upa2452tl-E1-A
Manufacturer:
RENENAS
Quantity:
20 000
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
40
30
20
10
0.8
0.6
0.4
0.2
50
40
30
20
10
0
0.01
0
1
0
-50
0
Pulsed
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
V
T
DS
GS
ch
= 2.5 V
0.1
- Drain to Source Voltage - V
- Channel Temperature - °C
0.4
3.1 V
4.0 V
4.5 V
0
I
D
- Drain Current - A
V
1
GS
0.8
50
= 4.5 V
2.5 V
V
I
D
10
DS
100
1.2
= 1.0 mA
= 10.0 V
3.1 V
4.0 V
Data Sheet G16272EJ1V0DS
100
150
1.6
0.0001
0.001
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.01
0.01
100
0.1
50
40
30
20
10
0.1
10
10
0
FORWARD TRANSFER CHARACTERISTICS
1
1
0.01
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
V
Pulsed
V
Pulsed
V
DS
DS
V
GS
= 10.0 V
=10.0 V
2
GS
0.5
- Gate to Source Voltage - V
- Gate to Source Voltage - V
I
D
- Drain Current - A
0.1
4
1
6
1.5
8
1
T
T
A
A
= 125°C
= −25°C
I
Pulsed
D
− 25°C
2
125°C
µ
75°C
25°C
10
25°C
75°C
= 4.0 A
PA2452
2.5
12
10