upa2452tl Renesas Electronics Corporation., upa2452tl Datasheet - Page 7

• Manufacturer Part Number: upa2452tl
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

5. This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion
Note 1. Definition (written as ε in this document)
applied to the device should become below 2000
characteristic of a device may be degraded and it may result in failure.
2. The relation of the distortion and the bend changes with several conditions, such as a size of substrate and
ε = (l − l
l
l: Distance above-mentioned when receiving stress.
so on.
0
: Distance for two arbitrary points before receiving stress.
0
)/l
The substrate that mounted the device is on a stand with a support width of 24 mm.
The device is turned downward. The stress is applied from a top.
0
Support width 24 mm
6000
5000
4000
3000
2000
1000
0
Figure 3. Example of the bend and the rate of distortion
0
Stress
Figure 2. Direction of substrate and stress
Bend - mm
0.5
Data Sheet G16272EJ1V0DS
µ
ε.
Note1
If the rate of distortion exceeds 2000
Substrate: 33 x 6 mm, t = 0.5 mm, FR-4
The direction of a device:
Measurement position
Device
1
Recommended condition
Bend
Note2
µ
ε, the
µ
PA2452
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