hmc560 Hittite Microwave Corporation, hmc560 Datasheet

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hmc560

Manufacturer Part Number
hmc560
Description
Gaas Mmic Fundamental Mixer, 24 - 40 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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4 - 84
4
Typical Applications
The HMC560 is ideal for:
• Test Equipment & Sensors
• Microwave Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
Functional Diagram
Electrical Specifi cations,
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
RF to IF Isolation
IP3 (Input)
IP2 (Input)
1 dB Compression (Input)
* Unless otherwise noted, all measurements performed as downconverter
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
v00.0705
T
A
= +25° C, IF = 1GHz, LO = +13 dBm*
Order On-line at www.hittite.com
Min.
28
20
12
DC - 18
24 - 36
Typ.
35
30
20
19
50
13
8
8
Features
Wide IF Bandwidth: DC - 18 GHz
Input IP3: +21 dBm
High LO/RF Isolation: 35 dB
Passive Double Balanced Topology
Compact Size: 1.14 x 0.59 x 0.1 mm
General Description
The HMC560 chip is a miniature passive double bal-
anced mixer which is fabricated in a GaAs MESFET
process, and can be used as an upconverter or down-
converter from 24-40 GHz in a small chip area. The
wide bandwidth allows this device to be used across
multiple radio bands with a common platform. Excel-
lent isolations are provided by on-chip baluns, and
the chip requires no external components and no
DC bias. Measurements were made with the chip
mounted and ribbon bonded into in a 50-ohm micro-
strip test fi xture. Measured data includes the parasi-
ticeffects of the assembly. RF connections to the chip
were made with 0.076mm (3-mil) ribbon bond with
minimal length <0.31mm (<12 mil).
Max.
GaAs MMIC FUNDAMENTAL
10
10
Min.
27
18
18
MIXER, 24 - 40 GHz
DC - 18
36 - 40
Typ.
10
10
35
28
28
21
50
15
HMC560
Max.
13
13
Units
GHz
GHz
dBm
dBm
dBm
dB
dB
dB
dB
dB

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hmc560 Summary of contents

Page 1

... High LO/RF Isolation Passive Double Balanced Topology Compact Size: 1.14 x 0.59 x 0.1 mm General Description The HMC560 chip is a miniature passive double bal- anced mixer which is fabricated in a GaAs MESFET process, and can be used as an upconverter or down- converter from 24-40 GHz in a small chip area. The wide bandwidth allows this device to be used across multiple radio bands with a common platform ...

Page 2

... IF Bandwidth @ LO = +13 dBm 0 -5 -10 -15 - Return Loss @ LO = +13 dBm 0 -5 -10 -15 -20 - Order On-line at www.hittite.com HMC560 MIXER GHz LO/RF RF/IF LO/ FREQUENCY (GHz) Conversion Gain IF Return Loss FREQUENCY (GHz ...

Page 3

... Input P1dB vs. Temperature @ LO = +13 dBm Order On-line at www.hittite.com HMC560 MIXER GHz + + FREQUENCY (GHz) +25 C + ...

Page 4

... BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. THIS DIE IS DESIGNED FOR PICK-UP WITH VACUUM (EDGE) COLLET TOOLS. TO PRECLUDE THE RISK OF PERMANENT DAMAGE, NO CONTACT TO THE DIE SURFACE IS ALLOWED WITHIN THIS RECTANGULAR AREA. Order On-line at www.hittite.com HMC560 MIXER GHz nLO ...

Page 5

... IF frequency range. For operation to DC, this pad must not source/sink more than 2mA of cur- rent or die non-function and possible die failure will result. The backside of the die must be connected to RF/DC ground. Order On-line at www.hittite.com HMC560 MIXER GHz Interface Schematic ...

Page 6

... Thick GaAs MMIC 0.076mm (0.003”) 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC560 MIXER GHz 3 mil Ribbon Bond RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 3 mil Ribbon Bond RF Ground Plane 0.254mm (0.010” ...

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