mf1s5001xdud NXP Semiconductors, mf1s5001xdud Datasheet - Page 28

• Manufacturer Part Number: mf1s5001xdud
• Description: Mifare Classic 1k - Mainstream Contactless Smart Card Ic For Fast And Easy Solution Development
• Manufacturer: NXP Semiconductors

NXP Semiconductors
14. Wafer specification
MF1S50YYX
Product data sheet
COMPANY PUBLIC
14.1 Fail die identification
For more details on the wafer delivery forms see
Table 29.
[1]
[2]
Electronic wafer mapping covers the electrical test results and additionally the results of
mechanical/visual inspection. No ink dots are applied.
Wafer
diameter
maximum diameter after foil expansion
thickness
flatness
Potential Good Dies per Wafer (PGDW)
Wafer backside
material
treatment
roughness
Chip dimensions
step size
gap between chips
Passivation
type
material
thickness
Au bump (substrate connected to VSS)
material
hardness
shear strength
height
height uniformity
flatness
size
size variation
under bump metallization
The step size and the gap between chips may vary due to changing foil expansion
Pads VSS and TESTIO are disconnected when wafer is sawn.
[1]
Wafer specifications MF1S50yyXDUy
All information provided in this document is subject to legal disclaimers.
[1]
Rev. 3.0 — 2 May 2011
MIFARE Classic 1K - Mainstream contactless smart card IC
MF1S50yyXDUD
MF1S50yyXDUF
196330
Ref.
500 nm / 600 nm
200 mm typical (8 inches)
210 mm
120 μm ± 15 μm
75 μm ± 10 μm
not applicable
est. 66264
Si
ground and stress relieve
R
R
x = 659 μm
y = 694 μm
typical = 19 μm
minimum = 5 μm
sandwich structure
PSG / nitride
> 99.9 % pure Au
35 to 80 HV 0.005
> 70 MPa
18 μm
within a die = ±2 μm
within a wafer = ±3 μm
wafer to wafer = ±4 μm
minimum = ±1.5 μm
LA, LB, VSS, TEST
±5 μm
sputtered TiW
9.
a
t
max = 5 μm
max = 0.5 μm
MF1S50yyX
[2]
© NXP B.V. 2011. All rights reserved.
= 66 μm × 66 μm
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