APT6011B2VFR_04 ADPOW [Advanced Power Technology], APT6011B2VFR_04 Datasheet - Page 2

• Manufacturer Part Number: APT6011B2VFR_04
• Description: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
• Manufacturer: ADPOW [Advanced Power Technology]

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
t
C
t
C
C
I
R
R
Q
Q
d(off)
V
dv
d(on)
Q
RRM
Q
I
SM
t
I
oss
t
t
rss
θJC
iss
SD
θJA
gd
S
rr
gs
r
f
/
g
rr
dt
0.25
0.20
0.15
0.10
0.05
0
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
10
S
S
S
-5
= -49A,
= -49A,
= -49A,
0.05
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.1
0.9
0.7
0.5
0.3
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
3
10
-4
dv
1
2
/
dt
(Body Diode)
(V
5
GS
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
SINGLE PULSE
S
10
= -49A)
-3
4 Starting T
5
I
I
Test Conditions
D
D
dv
device itself.
= 49A @ 25°C
= 49A @ 25°C
V
V
/
V
V
R
V
dt
f = 1 MHz
V
DD
DD
GS
GS
DS
G
GS
numbers reflect the limitations of the test circuit rather than the
T
T
T
T
T
T
= 0.6Ω
= 300V
= 300V
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V
10
j
-2
= +25°C, L = 2.50mH, R
I
S
≤
-
I
D
49A
Note:
di
Peak T J = P DM x Z θJC + T C
/
dt
MIN
MIN
Duty Factor D = t 1 / t
MIN
≤ 700A/µs
10
-1
t 1
G
= 25Ω, Peak I
t 2
8900
1100
TYP
TYP
APT6011B2VFR_LVFR
500
450
200
TYP
2.0
7.0
50
17
16
65
15
27
6
V
R
2
≤600V
MAX
MAX
MAX
196
300
600
0.20
1.3
L
49
15
40
1.0
= 49A
T
J
≤ 150
Amps
Amps
UNIT
UNIT
Volts
V/ns
UNIT
°C/W
nC
pF
µC
ns
ns
°
C