APT6011B2VFR_04 ADPOW [Advanced Power Technology], APT6011B2VFR_04 Datasheet - Page 3

• Manufacturer Part Number: APT6011B2VFR_04
• Description: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
• Manufacturer: ADPOW [Advanced Power Technology]

Case temperature. (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
50
40
30
20
10
0
0
-50
Junction
temp. (°C)
25
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
V DS > I D (ON) x R DS (ON)MAX.
V
I
V
D
FIGURE 4, TRANSFER CHARACTERISTICS
GS
GS
= 24.5A
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
(watts)
Power
-25
= 10V
1
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
J
50
T
, JUNCTION TEMPERATURE (°C)
C
T J = +125°C
0
, CASE TEMPERATURE (°C)
2
25
75
T J = +25°C
3
T J = -55°C
RC MODEL
50
100
4
0.0302
0.0729
0.0955
75
5
100 125 150
125
6
150
7
0.00809F
0.0182F
0.264F
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
120
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
80
60
40
20
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
-50
-50
0
0
V
V
GS
DS
NORMALIZED TO
FIGURE 5, R
-25
-25
V GS =15 &10 V
= 10V @ 24.5A
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T
5
I
20
J
D
T
, JUNCTION TEMPERATURE (°C)
, DRAIN CURRENT (AMPERES)
C
0
0
, CASE TEMPERATURE (°C)
10
V GS =10V
V GS =20V
25
DS
25
40
(ON) vs DRAIN CURRENT
15
50
50
60
75
75
20
APT6011B2VFR_LVFR
6V
100 125 150
100 125 150
5.5V
80
6.5V
25
5V
4.5V
100
30