M25P16-VME3G STMICROELECTRONICS [STMicroelectronics], M25P16-VME3G Datasheet - Page 40

• Manufacturer Part Number: M25P16-VME3G
• Description: 16 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

DC and AC parameters
Table 15.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
5. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are obtained with one
40/55
Symbol
t
t
t
t
t
t
t
t
t
HHQX
WHSL
SHWL
CLCH
CHCL
SHQZ
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CHHH
HHCH
DVCH
CHDX
CHSH
SHCH
CH
SLCH
CHSL
SHSL
CLQV
CLQX
HLCH
CHHL
DP
CL
PP
sequence including all the Bytes versus several sequences of only a few Bytes. (1 n 256)
t
t
CH
t
f
f
SE
BE
W
C
R
(1)
(2)
(5)
(1)
(2)
(2)
(2)
(2)
(2)
+ t
(2)
(2)
(4)
(4)
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
t
CSS
DSU
t
CSH
t
CLH
CLL
t
DIS
DH
HO
f
t
HZ
LZ
C
AC characteristics (Grade 6)
V
Clock Frequency
PP, SE, BE, DP, RES, WREN, WRDI, RDID, RDSR, WRSR
Clock Frequency for READ instructions
Clock High Time
Clock Low Time
Clock Rise Time
Clock Fall Time
S Active Setup Time (relative to C)
S Not Active Hold Time (relative to C)
Data In Setup Time
Data In Hold Time
S Active Hold Time (relative to C)
S Not Active Setup Time (relative to C)
S Deselect Time
Output Disable Time
Clock Low to Output Valid
Output Hold Time
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup Time
Write Protect Hold Time
S High to Deep Power-down Mode
S High to Standby Mode without Electronic Signature Read
S High to Standby Mode with Electronic Signature Read
Write Status Register Cycle Time
Page Program Cycle Time (256 Bytes)
Page Program Cycle Time (n Bytes)
Sector Erase Cycle Time
Bulk Erase Cycle Time
Test conditions specified in
(3)
(3)
(1)
(peak to peak)
(peak to peak)
for the following instructions: FAST_READ,
C
Parameter
Table 10
and
Table 12
Min.
D.C.
D.C.
100
100
0.1
0.1
20
9
9
5
5
2
5
5
5
0
5
5
5
5
n*1/256
Typ.
0.4+
1.4
17
5
1
Max.
20
50
30
30
15
40
8
8
8
8
3
5
3
M25P16
MHz
MHz
Unit
V/ns
V/ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
s
s