M25P16-VME3G STMICROELECTRONICS [STMicroelectronics], M25P16-VME3G Datasheet - Page 41

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M25P16-VME3G

Manufacturer Part Number
M25P16-VME3G
Description
16 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
M25P16
Table 16.
Symbol Alt.
t
t
t
t
t
t
t
t
t
SHQZ
HHQX
WHSL
SHWL
Applies only to products made with T9HX (0.11µm) Technology, identified with Process digit
CLCH
CHCL
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CHDX
CHSH
SHCH
CHHH
HHCH
CH
SLCH
CHSL
DVCH
CLQV
CLQX
HLCH
CHHL
SHSL
DP
CL
t
f
f
W
C
R
(3)
(4)
(5)
(5)
(5)
(5)
(5)
(5)
(5)
(5)
(7)
(7)
t
t
t
t
t
t
t
CLH
CSS
DSU
t
CSH
t
t
CLL
DIS
f
DH
HO
t
HZ
LZ
C
V
AC characteristics (Grade 6,
Clock Frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, WREN,
WRDI, RDID, RDSR, WRSR
Clock Frequency for READ instructions
Clock High Time
Clock Low Time
Clock Rise Time
Clock Fall Time
S Active Setup Time (relative to C)
S Not Active Hold Time (relative to C)
Data In Setup Time
Data In Hold Time
S Active Hold Time (relative to C)
S Not Active Setup Time (relative to C)
S Deselect Time
Output Disable Time
Clock Low to Output Valid
Output Hold Time
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup Time
Write Protect Hold Time
S High to Deep Power-down Mode
S High to Standby Mode without Electronic
Signature Read
S High to Standby Mode with Electronic
Signature Read
Write Status Register Cycle Time
Test conditions specified in
(6)
(6)
Parameter
(peak to peak)
(peak to peak)
“4”
T9HX (0.11µm) technology
(2)
Table 10
and
Min.
D.C.
D.C.
100
100
0.1
0.1
20
9
9
5
5
2
5
5
5
0
5
5
5
5
Table 12
DC and AC parameters
Typ.
)
1.3
(1)
(3)
Max. Unit
50
33
30
30
15
8
8
8
3
8
MHz
MHz
41/55
V/ns
V/ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs

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