MMBZ15VDL/DG NXP [NXP Semiconductors], MMBZ15VDL/DG Datasheet - Page 6

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MMBZ15VDL/DG

Manufacturer Part Number
MMBZ15VDL/DG
Description
Double ESD protection diodes for transient overvoltage suppression
Manufacturer
NXP [NXP Semiconductors]
Datasheet
NXP Semiconductors
7. Characteristics
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Table 10.
T
Symbol Parameter
Per diode
V
V
I
RM
amb
F
RWM
= 25 C unless otherwise specified.
forward voltage
reverse standoff
voltage
reverse leakage current
Characteristics
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
Double ESD protection diodes for transient overvoltage suppression
Rev. 01 — 3 September 2008
MMBZxVCL; MMBZxVDL series
Conditions
I
I
I
I
I
I
V
V
V
V
V
V
F
F
F
F
F
F
RWM
RWM
RWM
RWM
RWM
RWM
= 10 mA
= 10 mA
= 10 mA
= 10 mA
= 200 mA
= 10 mA
= 8.5 V
= 12.8 V
= 14.5 V
= 17 V
= 22 V
= 26 V
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.1
0.1
0.1
© NXP B.V. 2008. All rights reserved.
Max
0.9
0.9
0.9
0.9
1.1
0.9
8.5
12.8
14.5
17
22
26
5
5
5
5
5
5
Unit
V
V
V
V
V
V
V
V
V
V
V
V
nA
nA
nA
nA
nA
nA
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