MMBZ15VDL/DG NXP [NXP Semiconductors], MMBZ15VDL/DG Datasheet - Page 7

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MMBZ15VDL/DG

Manufacturer Part Number
MMBZ15VDL/DG
Description
Double ESD protection diodes for transient overvoltage suppression
Manufacturer
NXP [NXP Semiconductors]
Datasheet
NXP Semiconductors
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Table 10.
T
Symbol Parameter
V
C
V
amb
BR
CL
d
= 25 C unless otherwise specified.
breakdown voltage
diode capacitance
clamping voltage
Characteristics
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
Double ESD protection diodes for transient overvoltage suppression
Rev. 01 — 3 September 2008
MMBZxVCL; MMBZxVDL series
…continued
Conditions
I
f = 1 MHz; V
I
I
I
I
I
I
R
PPM
PPM
PPM
PPM
PPM
PPM
= 1 mA
= 2.35 A
= 1.9 A
= 1.6 A
= 1.4 A
= 1 A
= 0.87 A
R
= 0 V
[1][2]
Min
11.4
14.3
17.1
19
25.65
31.35
-
-
-
-
-
-
-
-
-
-
-
-
Typ
12
15
18
20
27
33
110
85
70
65
48
45
-
-
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
12.6
15.8
18.9
21
28.35
34.65
140
105
90
80
60
55
17
21.2
25
28
38
46
Unit
V
V
V
V
V
V
pF
pF
pF
pF
pF
pF
V
V
V
V
V
V
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