S8552 HAMAMATSU [Hamamatsu Corporation], S8552 Datasheet - Page 2
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S8552
Manufacturer Part Number
S8552
Description
Photodiodes for VUV (Vacuum UV) detection
Manufacturer
HAMAMATSU [Hamamatsu Corporation]
Datasheet
1.S8552.pdf
(2 pages)
2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
I Variation in sensitivity due to VUV exposure
120
100
80
60
40
20
0
[Typ. ArF excimer laser, 0.1 mJ/cm
ANODE TERMINAL
MARK
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
10 × 10
CONVENTIONAL TYPE
S8551, S8552, S8553
LEAD
0.5
NUMBER OF SHOT
16.5 ± 0.2
15.1 ± 0.3
12.5 ± 0.2
2
/pulse, f=100 Hz, λ=193 nm, pulse width=15 ns (FWHM)]
S8552
5 × 10
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
6
1 × 10
KSPDB0188EB
7
KSPDA0143EA
Si photodiode
I Dimensional outlines (unit: mm)
CAP WITHOUT WINDOW
S8551, S8552, S8553
WHITE CERAMIC
ACTIVE AREA
5.8 × 5.8
ACTIVE AREA
18 × 18
PHOTOSENSITIVE
SURFACE
1.0 MAX.
LEAD
0.45
3.4
CASE
S8551
S8553
LEAD
12.35 ± 0.1
13.9 ± 0.2
10.5 ± 0.1
7.5 ± 0.2
25.5
0.45
18.0
+0
-0.6
PHOTOSENSITIVE
SURFACE
1.75
ANODE TERMINAL MARK
1.4
KSPDA0142EA
KSPDA0144EA
Cat. No. KSPD1050E02
Jul. 2002 DN