qm30e2y Mitsumi Electronics, Corp., qm30e2y Datasheet - Page 3

• Manufacturer Part Number: qm30e2y
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
I
V
t
Q
R
R
RRM
rr
FM
th (j-c)
th (c-f)
rr
Symbol
Repetitive peak reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
10
100
10
10
80
60
40
20
–1
0
7
5
4
3
2
7
5
4
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
1.0
0
T
Parameter
BASE-EMITTER VOLTAGE V
j
=25°C
T
V
CHARACTERISTICS (TYPICAL)
j
CE
COMMON EMITTER OUTPUT
=25°C
CHARACTERISTIC (TYPICAL)
COMMON EMITTER INPUT
=2.0V
1.4
1
1.8
2
2.2
(Diode part (D2), T
V
I
I
Junction to case
Conductive grease applied (case to fin)
I
I
I
I
I
3
F
F
B
B
B
B
B
R
=30A
=30A, di/dt=–60A/ s, V
=2.0A
=1.0A
=0.5A
=0.3A
=0.1A
=V
RRM
2.6
, T
4
BE
j
=150 C
(V)
CE
3.0
(V)
5
j
=25 C)
Test conditions
R
=600V, T
j
=150 C
10
10
10
10
10
10
–1
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
3
2
1
1
0
10
10
0
0
I
COLLECTOR CURRENT (TYPICAL)
MITSUBISHI TRANSISTOR MODULES
B
=0.4A
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
COLLECTOR CURRENT I
2 3 4 5 7
2 3 4 5 7
MEDIUM POWER SWITCHING USE
T
T
V
T
T
DC CURRENT GAIN VS.
SATURATION VOLTAGE
j
j
=25°C
=125°C
BE(sat)
j
j
=25°C
=125°C
V
CE
=2.0V
Min.
QM30E2Y/E3Y-H
—
—
—
—
—
—
10
10
1
1
V
CE(sat)
Limits
Typ.
2 3 4 5 7
2 3 4 5 7
—
—
—
—
—
—
V
CE
C
C
INSULATED TYPE
=5.0V
Max.
(A)
(A)
0.15
5.0
1.5
0.9
1.3
15
10
10
2
2
Feb.1999
Unit
mA
C/ W
C/ W
V
C
s