qm30e2y Mitsumi Electronics, Corp., qm30e2y Datasheet - Page 6

• Manufacturer Part Number: qm30e2y
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

PERFORMANCE CURVES (Diode part (D2))
1000
10
800
600
400
200
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
MAXIMUM FORWARD CHARACTERISTIC
–1
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
10
3
2
1
0
10
CONDUCTION TIME (CYCLES AT 60Hz)
0.6
V
I
0
F
0
R
=30A
MAXIMUM SURGE CURRENT
2
=300V
T
FORWARD VOLTAGE V
2
j
3
=25°C
T
T
4
j
j
=25°C
=150°C
(VS. di/dt) (TYPICAL)
1.0
3
5
7
4
10
5
di/dt (A/ s)
1
7
1.4
2
10
3
4
1
5
7
1.8
2
10
2
3
F
2
Q
4
(V)
I
t
rr
rr
3
2.2
rr
5
4
5
7
7
10
10
10
10
10
10
2
3
2
1
0
–1
10
10
10
10
10
2.0
1.6
1.2
0.8
0.4
REVERSE RECOVERY CHARACTERISTICS
10
–1
–1
0
10
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
10
TRANSIENT THERMAL IMPEDANCE
–1
–3
V
di/dt=–60A/µs
MITSUBISHI TRANSISTOR MODULES
0
R
2
2
=300V
2
FORWARD CURRENT I
MEDIUM POWER SWITCHING USE
3
3
3
T
T
4
4
4
j
j
=25°C
=150°C
5
5
5
CHARACTERISTIC
(VS. I
7
7
7
10
10
10
Q
1
I
t
–2
0
rr
rr
TIME (s)
rr
F
QM30E2Y/E3Y-H
2
2
2
) (TYPICAL)
3
3
3
4
4
4
5
5
5
7
7
10
10
–1
1
F
2
2
INSULATED TYPE
(A)
3
3
4
4
5
5
7
7
10
10
10
10
10
10
0
2
2
1
0
–1
Feb.1999