qm75e2y-2h Mitsumi Electronics, Corp., qm75e2y-2h Datasheet - Page 2

• Manufacturer Part Number: qm75e2y-2h
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
V
V
V
V
I
–I
P
I
–I
V
V
V
I
I
I
T
T
V
I
I
I
V
V
–V
h
t
t
t
R
R
R
C
B
DC
FSM
2 t
CEX
CBO
EBO
on
s
f
j
stg
FE
CEX (SUS)
CEX
CBO
EBO
C
RRM
RSM
R (DC)
iso
CE (sat)
BE (sat)
th (j-c) Q
th (j-c) R
th (c-f)
C
CSM
Symbol
Symbol
Symbol
Symbol
CEO
—
—
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
DC current
Surge (non-repetitive) forward current
I
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
2 t
for fusing
Parameter
Parameter
Parameter
Parameter
(Transistor part including D1, T
I
V
Emitter open
Collector open
DC
DC (forward diode current)
T
DC
Peak value of one cycle of 60Hz (half wave)
DC circuit, resistive, inductive load
Peak value of one cycle of 60Hz (half wave)
Value for one cycle of surge current
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
V
V
V
I
–I
I
V
Transistor part
Diode part
Conductive grease applied
(Transistor part including D1, T
C
(Diode part (D2), T
(Common)
C
C
EB
C
CE
CB
EB
CC
C
=1A, V
=75A, I
=75A, V
=25 C
=75A (diode forward voltage)
=2V
=1000V, V
=7V
=1000V, Emitter open
=600V, I
EB
B
CE
=1.5A
=2V
=2.8V/5V
C
=75A, I
EB
=2V
B1
j
=25 C)
=–I
Test conditions
B2
Conditions
Conditions
Conditions
=1.5A
j
=25 C)
j
=25 C)
MITSUBISHI TRANSISTOR MODULES
HIGH POWER SWITCHING USE
QM75E2Y/E3Y-2H
75/100
Min.
—
—
—
—
—
—
—
—
—
—
—
—
9.45
1.47~1.96
1.96~2.94
–40~150
–40~125
Ratings
Ratings
Ratings
15~20
20~30
Limits
1000
1000
1000
1000
1100
1500
2500
Typ.
500
750
800
250
75
75
75
—
—
—
—
—
—
—
—
—
—
—
—
—
7
4
10
3
INSULATED TYPE
Max.
0.25
0.13
100
1.0
1.0
2.5
3.5
1.8
2.5
3.0
1.2
15
—
kg·cm
kg·cm
N·m
N·m
Feb.1999
Unit
Unit
Unit
Unit
C/ W
C/ W
C/ W
A
mA
mA
mA
W
—
V
V
V
V
A
A
A
A
V
V
V
A
A
V
g
V
V
V
2
C
C
s
s
s
s