qm75e2y-2h Mitsumi Electronics, Corp., qm75e2y-2h Datasheet - Page 4

• Manufacturer Part Number: qm75e2y-2h
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

10
10
10
10
10
10
10
FORWARD BIAS SAFE OPERATING AREA
7
5
4
3
2
7
5
4
3
2
5
4
3
2
1
0
10
7
5
3
2
7
5
3
2
7
5
3
2
10
10
2
1
0
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
COLLECTOR-EMITTER SATURATION
–1
0
–2
BASE REVERSE CURRENT –I
T
NON-REPETITIVE
C
2
2
=25°C
SWITCHING TIME VS. BASE
2
3
3
4
4
BASE CURRENT I
CURRENT (TYPICAL)
VOLTAGE (TYPICAL)
5
3 4 5 7
5
7
7
10
10
I
C
–1
1
=30A
t
2
2
s
DC
10
3
3
4
4
0
t
5
f
5
7
7
V
I
I
C
B1
2 3 4 5 7
10
CC
10
=75A
=1.5A
B
=600V
I
0
100µs
2
I
C
t
C
T
T
(A)
T
T
w
200µs
=50A
2
2
=100A
j
j
I
j
j
=25°C
=125°C
=50µs
=25°C
=125°C
1ms
C
3
3
=75A
B2
4
4
5
(A)
5
CE
7
7
10
(V)
10
10
1
1
3
10
160
140
120
100
100
10
10
10
80
60
40
20
90
80
70
60
50
40
30
20
10
–1
REVERSE BIAS SAFE OPERATING AREA
0
0
7
5
3
2
7
5
3
2
7
5
3
2
10
COLLECTOR-EMITTER VOLTAGE V
2
1
0
0
0
DERATING FACTOR OF F. B. S. O. A.
SWITCHING TIME VS. COLLECTOR
0
MITSUBISHI TRANSISTOR MODULES
COLLECTOR
DISSIPATION
2
20
COLLECTOR CURRENT I
CASE TEMPERATURE T
3
200
4
CURRENT (TYPICAL)
5
40
HIGH POWER SWITCHING USE
7
10
T
60
400
QM75E2Y/E3Y-2H
j
1
=125°C
2
t
80
3
s
I
t
B2
f
4
SECOND BREAK-
DOWN AREA
=–4A
5
600
100 120
7
V
I
10
B1
CC
=–I
t
2
=600V
on
T
T
C
2
800
C
INSULATED TYPE
I
B2
j
j
=25°C
=125°C
B2
( C)
3
(A)
140
=1.5A
=–2A
4
5
CE
7
1000
160
(V)
10
3
Feb.1999