SST29EE010-120-4C-EH SST [Silicon Storage Technology, Inc], SST29EE010-120-4C-EH Datasheet - Page 9

• Manufacturer Part Number: SST29EE010-120-4C-EH
• Description: 1 Megabit (128K x8) Page-Mode EEPROM
• Manufacturer: SST [Silicon Storage Technology, Inc]

1 Megabit Page-Mode EEPROM
SST29EE010 / SST29LE010 / SST29VE010
T
T
Note:
T
Note:
© 2000 Silicon Storage Technology, Inc.
ABLE
ABLE
ABLE
Parameter
C
C
Symbol
N
T
V
V
I
LTH
DR
Symbol
T
T
ZAP_MM
I/O
IN
END
ZAP_HBM
PU-READ
PU-WRITE
(1)
(1)
(1)
(1)
(1)
8: C
9: R
7: P
(1)
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
ELIABILITY
(1)
OWER
APACITANCE
(1)
(1)
(1)
-
UP
T
Parameter
Endurance
Data Retention
ESD Susceptibility
Human Body Model
ESD Susceptibility
Machine Model
Latch Up
C
IMINGS
HARACTERISTICS
(T
a
Parameter
Power-up to Read Operation
Power-up to Write Operation
= 25 °C, f=1 MHz, other pins open)
Description
I/O Pin Capacitance
Input Capacitance
Minimum Specification
10,000
2000
100
200
100
9
V
V
Test Condition
I/O =
IN =
Maximum
100
5
0V
0V
Cycles
Years
Units
Volts
Volts
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard A114
JEDEC Standard A115
JEDEC Standard 78
Maximum
12 pF
6 pF
Units
µs
ms
304 PGM T9.3
304 PGM T8.0
304 PGM T7.0
304-3 6/00
5
6
7
8
13
14
15
16
1
2
3
4
9
10
11
12