SST29EE010-70-4C-EH SST [Silicon Storage Technology, Inc], SST29EE010-70-4C-EH Datasheet - Page 10

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SST29EE010-70-4C-EH

Manufacturer Part Number
SST29EE010-70-4C-EH
Description
1 Mbit (128K x8) Page-Write EEPROM
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet

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SST29EE010-70-4C-EH
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Data Sheet
TABLE 7: R
TABLE 8: C
TABLE 9: R
©2005 Silicon Storage Technology, Inc.
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
LTH
PU-READ
PU-WRITE
DR
I/O
IN
END
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
1
1
1
1
1
ECOMMENDED
APACITANCE (T
ELIABILITY
Parameter
Power-up to Read Operation
Power-up to Write Operation
Description
I/O Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
C
HARACTERISTICS
S
A
YSTEM
= 25°C, f=1 Mhz, other pins open)
P
OWER
-
UP
T
IMINGS
Minimum Specification
10
10,000
100
100
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Test Condition
Cycles
Units
Years
mA
Minimum
V
V
I/O
IN
100
5
= 0V
= 0V
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
Test Method
S71061-11-000
Maximum
Units
12 pF
6 pF
ms
µs
T7.1 1061
T8.0 1061
T9.5 1061
9/05

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