SST29EE020-150-4C-U2 SST [Silicon Storage Technology, Inc], SST29EE020-150-4C-U2 Datasheet

SST29EE020-150-4C-U2

Manufacturer Part Number

SST29EE020-150-4C-U2

Description

2 Mbit (256K x8) Page-Mode EEPROM

Manufacturer

SST [Silicon Storage Technology, Inc]

Datasheet

1.SST29EE020-150-4C-U2.pdf (26 pages)

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FEATURES:

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption

• Fast Page-Write Operation

• Fast Read Access Time

PRODUCT DESCRIPTION

The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write

EEPROM manufactured with SST’s proprietary, high per-

formance CMOS SuperFlash technology. The split-gate

cell design and thick oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST29EE/LE/VE020 write with a single

power supply. Internal Erase/Program is transparent to the

user. The SST29EE/LE/VE020 conform to JEDEC stan-

dard pinouts for byte-wide memories.

Featuring high performance Page-Write, the SST29EE/LE/

VE020 provide a typical Byte-Write time of 39 µsec. The

entire memory, i.e., 256 KBytes, can be written page-by-

page in as little as 10 seconds, when using interface fea-

tures such as Toggle Bit or Data# Polling to indicate the

completion of a Write cycle. To protect against inadvertent

write, the SST29EE/LE/VE020 have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, the

SST29EE/LE/VE020 are offered with a guaranteed Page-

Write endurance of 10,000 cycles. Data retention is rated at

greater than 100 years.

S71062-06-000 6/01

– 5.0V-only for SST29EE020

– 3.0-3.6V for SST29LE020

– 2.7-3.6V for SST29VE020

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 20 mA (typical) for 5V and

– Standby Current: 10 µA (typical)

– 128 Bytes per Page, 2048 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 10 sec (typical)

– Effective Byte-Write Cycle Time: 39 µs (typical)

– 5.0V-only operation: 120 and 150 ns

– 3.0-3.6V operation: 200 and 250 ns

– 2.7-3.6V operation: 200 and 250 ns

10 mA (typical) for 3.0/2.7V

2 Mbit (256K x8) Page-Mode EEPROM

SST29EE020 / SST29LE020 / SST29VE0202 Mb Page-Mode flash memories

307

SST29EE020 / SST29LE020 / SST29VE020

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Latched Address and Data

• Automatic Write Timing

• End of Write Detection

• Hardware and Software Data Protection

• Product Identification can be accessed via

• TTL I/O Compatibility

• JEDEC Standard

• Packages Available

The SST29EE/LE/VE020 are suited for applications that

require convenient and economical updating of program,

configuration, or data memory. For all system applications,

the SST29EE/LE/VE020 significantly improve performance

and reliability, while lowering power consumption. The

SST29EE/LE/VE020 improve flexibility while lowering the

cost for program, data, and configuration storage applica-

tions.

To meet high density, surface mount requirements, the

SST29EE/LE/VE020 are offered in 32-lead PLCC and 32-

lead TSOP packages. A 600-mil, 32-pin PDIP package is

also available. See Figures 1, 2, and 3 for pinouts.

Device Operation

The SST Page-Mode EEPROM offers in-circuit electrical

write capability. The SST29EE/LE/VE020 does not require

separate Erase and Program operations. The internally

timed Write cycle executes both erase and program trans-

parently to the user. The SST29EE/LE/VE020 have indus-

try standard optional Software Data Protection, which SST

recommends always to be enabled. The SST29EE/LE/

VE020 are compatible with industry standard EEPROM

pinouts and functionality.

– Internal V

– Toggle Bit

– Data# Polling

Software Operation

– Flash EEPROM Pinouts and command sets

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)

– 32-pin PDIP

Generation

These specifications are subject to change without notice.

SSF is a trademark of Silicon Storage Technology, Inc.

Data Sheet

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