SST29SF020-55-4C-NHE SST [Silicon Storage Technology, Inc], SST29SF020-55-4C-NHE Datasheet

SST29SF020-55-4C-NHE

Manufacturer Part Number

SST29SF020-55-4C-NHE

Description

2 Mbit / 4 Mbit (x8) Small-Sector Flash

Manufacturer

SST [Silicon Storage Technology, Inc]

Datasheet

1.SST29SF020-55-4C-NHE.pdf (25 pages)

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Bonase Electronics (HK) Co., Limited

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SST29SF020-55-4C-NHE

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FEATURES:

• Organized as 256K x8 / 512K x8

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption:

• Sector-Erase Capability

• Fast Read Access Time:

• Latched Address and Data

PRODUCT DESCRIPTION

The SST29SF020/040 and SST29VF020/040 are 256K

x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufac-

tured with SST’s proprietary, high-performance CMOS

SuperFlash technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST29SF020/040 devices write (Program or Erase)

with a 4.5-5.5V power supply. The SST29VF020/040

devices write (Program or Erase) with a 2.7-3.6V power

supply. These devices conform to JEDEC standard pin

assignments for x8 memories.

Featuring

SST29SF020/040 and SST29VF020/040 devices pro-

vide a maximum Byte-Program time of 20 µsec. To protect

against inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, these

devices are offered with a guaranteed endurance of at least

10,000 cycles. Data retention is rated at greater than 100

years.

The SST29SF020/040 and SST29VF020/040 devices

are suited for applications that require convenient and eco-

nomical updating of program, configuration, or data mem-

S71160-13-000

– 4.5-5.5V for SST29SF020/040

– 2.7-3.6V for SST29VF020/040

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 10 mA (typical)

– Standby Current:

– Uniform 128 Byte sectors

– 55 ns for SST29SF020/040

– 70 ns for SST29VF020/040

30 µA (typical) for SST29SF020/040

1 µA (typical) for SST29VF020/040

high

2 Mbit / 4 Mbit (x8) Small-Sector Flash

performance

10/06

Byte-Program, Small-Sector flash memories

SST29SF/VF020 / 0402Mb / 4Mb (x8)

SST29SF020 / SST29SF040

SST29VF020 / SST29VF040

Byte-Program,

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Fast Erase and Byte-Program:

• Automatic Write Timing

• End-of-Write Detection

• TTL I/O Compatibility for SST29SF020/040

• CMOS I/O Compatibility for SST29VF020/040

• JEDEC Standard

• Packages Available

• All non-Pb (lead-free) devices are RoHS compliant

ory. For all system applications, they significantly improve

performance and reliability, while lowering power consump-

tion. They inherently use less energy during Erase and

Program than alternative flash technologies. The total

energy consumed is a function of the applied voltage, cur-

rent, and time of application. Since for any given voltage

range, the SuperFlash technology uses less current to pro-

gram and has a shorter erase time, the total energy con-

sumed during any Erase or Program operation is less than

alternative flash technologies. They also improve flexibility

while lowering the cost for program, data, and configuration

storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times independent of the number of Erase/Program

cycles that have occurred. Therefore, the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST29SF020/040 and SST29VF020/040 devices are

offered in 32-lead PLCC and 32-lead TSOP packages. The

pin assignments are shown in Figures 2 and 3.

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

– Internal V

– Toggle Bit

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

4 seconds (typical) for SST29SF/VF020

8 seconds (typical) for SST29SF/VF040

Generation

These specifications are subject to change without notice.

SSF is a trademark of Silicon Storage Technology, Inc.

Data Sheet

Related parts for SST29SF020-55-4C-NHE

SST29SF020-55-4C-NHE Summary of contents

Page 1

... SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29SF020/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The SST29VF020/040 devices write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x8 memories ...

Page 2

... CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Read The Read operation of the SST29SF020/040 and SST29VF020/040 devices are controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is con- sumed ...

Page 3

... Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a Write cycle. V Power Up/Down Detection: The Write operation is DD inhibited when V is less than 2.5V for SST29SF020 040. The Write operation is inhibited when V 1.5V. for SST29VF020/040. Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation ...

Page 4

... Program or Erase operation. See Table 4 for software command codes, Figure 12 for timing wave- form, and Figure 18 for a flowchart. Data BFH 24H 25H 13H 14H T1.3 1160 X-Decoder I/O Buffers and Data Latches Control Logic 4 SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 SuperFlash Memory Y-Decoder 1160 B1.0 S71160-13-000 10/06 ...

Page 5

... Mbit / 4 Mbit Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 SST29SF/VF040 SST29SF/VF020 DQ0 FIGURE 2: Pin Assignments for 32-lead PLCC SST29SF/VF040 SST29SF/VF020 A11 A11 A13 A13 4 A14 A14 5 A17 A17 6 WE# WE A18 NC 9 A16 ...

Page 6

... High High OUT X V High OUT SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 -A address lines will select the MS 8 SST29SF020/040 SST29VF020/040 T2.5 1160 Address Sector address, XXH for Chip-Erase See Table 4 T3.4 1160 S71160-13-000 ...

Page 7

... With SST Manufacturer’ BFH, is read with SST29SF020 Device ID = 24H, is read with A SST29VF020 Device ID = 25H, is read with A SST29SF040 Device ID = 13H, is read with A SST29VF040 Device ID = 14H, is read with A 6. Both Software ID Exit operations are equivalent ©2005 Silicon Storage Technology, Inc. ...

Page 8

... Excluding certain with-Pb 32-PLCC units, all packages are 260 Certain with-Pb 32-PLCC package types are capable of 240 2. Outputs shorted for no more than one second. No more than one output shorted at a time. Operating Range for SST29SF020/040 Range Ambient Temp Commercial 0° ...

Page 9

... Mbit / 4 Mbit Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 TABLE 6: DC Operating Characteristics V Symbol Parameter I Power Supply Current DD Read Write I Standby V Current Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage IL V Input High Voltage IH V Input High Voltage (CMOS) ...

Page 10

... Data Sheet AC CHARACTERISTICS TABLE 10: Read Cycle Timing Parameters V = 4.5-5.5V for SST29SF020/040 and 2.7-3.6V for SST29VF020/040 DD Symbol Parameter T Read Cycle Time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time CE# Low to Active Output CLZ 1 T OE# Low to Active Output ...

Page 11

... Mbit / 4 Mbit Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 ADDRESS A MS-0 CE# OE WE# HIGH-Z DQ 7-0 Note Most significant address for SST29SF/VF020 and FIGURE 4: Read Cycle Timing Diagram 555 ADDRESS OE# CE# DQ 7-0 AA SW0 Note Most significant address ...

Page 12

... INTERNAL PROGRAM OPERATION STARTS 2AA 555 ADDR CPH DATA SW1 SW2 BYTE (ADDR/DATA) for SST29SF/VF040 ROGRAM YCLE IMING IAGRAM OEH SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 1160 F05.1 T OES D# D S71160-13-000 1160 F06.1 10/06 ...

Page 13

... Mbit / 4 Mbit Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 ADDRESS A MS-0 CE# OE# WE Note Most significant address for SST29SF/VF020 and FIGURE OGGLE IT IMING 555 ADDRESS A MS-0 CE# OE WE# DQ 7-0 AA SW0 Note: This device also supports CE# controlled Sector-Erase operation The WE# and CE# signals are interchangeable as long as minimum timings are met ...

Page 14

... ADDRESS A 14-0 555 CE# OE WE# DQ 7-0 AA SW0 Note: Device ID = 24H for SST29SF020, 13H for SST29SF040 25H for SST29VF020, 14H for SST29VF040 FIGURE 11: Software ID Entry and Read ©2005 Silicon Storage Technology, Inc. 2 Mbit / 4 Mbit Small-Sector Flash SIX-BYTE CODE FOR CHIP-ERASE 2AA 555 555 ...

Page 15

... Mbit / 4 Mbit Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 Three-Byte Sequence for Sofware ID Exit and Reset 555 ADDRESS A 14 7-0 CE# OE WE# SW0 FIGURE 12 OFTWARE XIT AND ©2005 Silicon Storage Technology, Inc. 2AA 555 IDA T WHP SW1 SW2 R ESET ...

Page 16

... INPUT V ILT AC test inputs are driven at V (3.0V) for a logic “1” and V IHT and outputs are V (1 and FIGURE 13: AC Input/Output Reference Waveforms for SST29SF020/040 V IHT INPUT V ILT AC test inputs are driven at V (0.9 V IHT for inputs and outputs are V (0 ...

Page 17

... Mbit / 4 Mbit Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 FIGURE 16: Byte-Program Algorithm ©2005 Silicon Storage Technology, Inc. Start Load data: AAH Address: 555H Load data: 55H Address: 2AAH Load data: A0H Address: 555H Load Byte Address/Byte Data Wait for end of Program ( ...

Page 18

... Data Sheet Internal Timer Byte- Program/Erase Initiated Wait SCE Program/Erase Completed FIGURE 17: Wait Options ©2005 Silicon Storage Technology, Inc. 2 Mbit / 4 Mbit Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 Toggle Bit Byte- Program/Erase Initiated Read byte Read same No byte No Does DQ 6 match? ...

Page 19

... Mbit / 4 Mbit Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 Software ID Entry Command Sequence Load data: AAH Address: 555H Load data: 55H Address: 2AAH Load data: 90H Address: 555H Wait T IDA Read Software ID FIGURE 18: Software ID Command Flowcharts ©2005 Silicon Storage Technology, Inc. Software ID Exit & ...

Page 20

... Load data: 55H Address: 2AAH Load data: 80H Address: 555H Load data: AAH Address: 555H Load data: 55H Address: 2AAH Load data: 20H Address Wait T SCE Wait T SE Sector erased to FFH to FFH 20 SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 1160 F18.0 S71160-13-000 10/06 ...

Page 21

... Mbit / 4 Mbit Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 PRODUCT ORDERING INFORMATION Device Speed Suffix1 SST29xFxxx - XXX - XX ©2005 Silicon Storage Technology, Inc. Suffix2 - XXX Environmental Attribute non-Pb Package Modifier leads Package Type N = PLCC W = TSOP (type 1, die up, 8mm x 14mm) Temperature Range C = Commercial = 0° ...

Page 22

... Data Sheet Valid combinations for SST29SF020 SST29SF020-55-4C-NHE SST29SF020-55-4C-WHE SST29SF020-55-4I-NHE SST29SF020-55-4I-WHE Valid combinations for SST29VF020 SST29VF020-70-4C-NHE SST29VF020-70-4C-WHE SST29VF020-70-4I-NHE SST29VF020-70-4I-WHE Valid combinations for SST29SF040 SST29SF040-55-4C-NH SST29SF040-55-4C-WH SST29SF040-55-4C-NHE SST29SF040-55-4C-WHE SST29SF040-55-4I-NH SST29SF040-55-4I-WH SST29SF040-55-4I-NHE SST29SF040-55-4I-WHE ...

Page 23

... Mbit / 4 Mbit Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 PACKAGING DIAGRAMS TOP VIEW .495 .485 .453 Optional .447 Pin #1 .048 Identifier .042 .042 .048 .595 .553 .585 .547 .050 BSC Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. ...

Page 24

... All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0 Maximum allowable mold flash is 0. the package ends, and 0.25 mm between leads. 32-lead Thin Small Outline Package (TSOP) 8mm x 14mm SST Package Code: WH ©2005 Silicon Storage Technology, Inc. 2 Mbit / 4 Mbit Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 1.05 0.95 0.50 BSC 8.10 ...

Page 25

... Mbit / 4 Mbit Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 TABLE 12: Revision History Number 05 • 2002 Data Book 06 • Removed 512 Kbit, 1 Mbit, and 2 Mbit parts • Commercial temperature and 70 ns parts removed • PH package is no longer offered • Part number changes - see page 22 for additional information • ...

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