SST37VF010-70-3C-NH SST [Silicon Storage Technology, Inc], SST37VF010-70-3C-NH Datasheet - Page 6

• Manufacturer Part Number: SST37VF010-70-3C-NH
• Description: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
• Manufacturer: SST [Silicon Storage Technology, Inc]

TABLE 4: R
TABLE 5: P
TABLE 6: R
TABLE 7: C
TABLE 8: R
©2001 Silicon Storage Technology, Inc.
Symbol
I
I
I
I
V
V
V
V
V
I
Symbol Parameter
I
I
I
V
I
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
DD
SB
LI
LO
H
DD
LI
LO
H
LTH
PU-READ
PU-WRITE
DR
IL
IH
IHC
OL
OH
H
I/O
IN
END
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
1
1
1
1
V
Input Leakage Current
Output Leakage Current
Supervoltage for A
Supervoltage Current for A
1
Parameter
V
Standby V
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
Supervoltage Current for A
DD
DD
Erase or Program Current
ROGRAM
EAD
ECOMMENDED
APACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
ELIABILITY
Read Current
M
Parameter
Power-up to Read Operation
Power-up to Write Operation
Description
I/O Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
DD
ODE
/E
Current
RASE
C
DC O
9
HARACTERISTICS
and OE#
S
YSTEM
DC O
PERATING
9
9
and OE#
for Read-ID
PERATING
SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040
P
OWER
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
C
HARACTERISTICS
-
UP
11.4 12.6
Min
C
HARACTERISTICS
T
IMINGS
Limits
Max Units
200
Minimum Specification
20
10
V
0.7 V
V
1
DD
DD
Min
-0.3
-0.3
6
DD
mA
µA
µA
µA
V
Limits
V
100 + I
DD
10,000
Max
200
0.8
0.2
12
15
10
100
1
Test Conditions
CE#=V
V
V
OE#=V
=2.7-3.6V
V
OUT
IN
DD
DD
=GND to V
Units
=GND to V
=2.7-3.6V
mA
µA
µA
µA
µA
V
V
V
V
V
IL,
H
Max, A
OE#=V
(Ta = 0°C to +70°C (Commercial))
Test Conditions
Address input=V
V
CE#=OE#=V
CE#=V
V
V
V
V
V
I
I
CE#=OE#=V
OL
OH
DD
DD
IN
OUT
DD
DD
DD
=100 µA, V
DD
=GND to V
=-100 µA, V
9
, V
=V
=V
=V
=V
H
=V
Units
(Ta = 25°C±5°C)
=GND to V
, V
, V
Test Condition
Cycles
Years
DD
DD
DD
DD
DD
H
mA
IHC
DD
DD
Minimum
=V
V
Max, V
V
Max
Min
Max
Max
, V
I/O
=V
=V
IN
100
100
DD
= 0V
DD
IL
IL
= 0V
DD
DD
DD
DD
, all I/Os open
, A
Max
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
DD
=V
DD
DD
Max, WE#=V
Max
, V
=V
IL
9
=V
/V
DD
, V
=V
=V
DD
DD
IH
DD
H
Max
DD
DD
=V
, at f=1/T
Min
Max
=V
Min
S71151-02-000 5/01
Max, CE# = V
DD
DD
Max
Maximum
Max
IL
Units
12 pF
Data Sheet
RC
6 pF
µs
µs
Min
T4.3 397
T6.1 397
T7.0 397
T8.3 397
T5.1 397
IL
397