SST39LF010-45-4C-B3H SST [Silicon Storage Technology, Inc], SST39LF010-45-4C-B3H Datasheet - Page 6

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SST39LF010-45-4C-B3H

Manufacturer Part Number
SST39LF010-45-4C-B3H
Description
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet
TABLE 2: P
TABLE 3: O
©2001 Silicon Storage Technology, Inc.
Symbol
A
DQ
CE#
OE#
WE#
V
V
NC
Mode
Read
Program
Erase
Standby
Write Inhibit
Product Identification
Software Mode
MS
DD
SS
1. A
1. X can be V
7
1
-DQ
-A
A
MS
MS
0
0
= Most significant address
= A
15
for SST39LF/VF512, A
IN
Pin Name
Address Inputs
Data Input/output
Chip Enable
Output Enable
Write Enable
Power Supply
Ground
No Connection
PERATION
IL
or V
D
ESCRIPTION
IH
, but no other value.
M
ODES
16
S
Functions
To provide memory addresses. During Sector-Erase A
sector. During Block-Erase A
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
To activate the device when CE# is low.
To gate the data output buffers.
To control the Write operations.
To provide power supply voltage:
Unconnected pins.
ELECTION
for SST39LF/VF010, A
CE#
V
V
V
V
V
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
X
X
IH
IL
IL
IL
IL
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
OE#
V
V
V
V
V
X
X
IH
IH
IL
IL
IL
17
for SST39LF/VF020, and A
WE#
V
V
V
V
V
X
X
6
IH
IH
IH
IL
IL
MS
-A
DQ
D
D
X
High Z
High Z/ D
High Z/ D
16
1
OUT
IN
address lines will select the block.
3.0-3.6V for SST39LF512/010/020/040
2.7-3.6V for SST39VF512/010/020/040
OUT
OUT
18
for SST39LF/VF040
MS
-A
Address
A
A
Sector address,
XXH for Chip-Erase
X
X
X
See Table 4
IN
IN
12
address lines will select the
S71150-03-000 6/01
Data Sheet
T2.1 395
T3.4 395
395

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