buk454-200 NXP Semiconductors, buk454-200 Datasheet

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buk454-200

Manufacturer Part Number
buk454-200
Description
Buk444-200a/b Powermos Transistor
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK454-200
Manufacturer:
PHILIPS
Quantity:
5 000
Part Number:
buk454-200A
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Part Number:
buk454-200A/B
Manufacturer:
NXP
Quantity:
12 500
Part Number:
buk454-200B
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
PINNING - SOT186
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
April 1993
PowerMOS transistor
SYMBOL
V
V
I
I
I
P
T
T
SYMBOL PARAMETER
R
R
D
D
DM
case isolated
PIN
V
DS
DGR
tot
stg
j
th j-hs
th j-a
1
2
3
GS
gate
drain
source
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
DESCRIPTION
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
R
D
DS
tot
DS(ON)
CONDITIONS
with heatsink compound
CONDITIONS
-
R
-
T
T
T
T
-
-
hs
hs
hs
hs
GS
case
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
1
1 2 3
MIN.
- 55
BUK444
-
-
-
-
-
-
-
-
SYMBOL
-200A
MIN.
5.3
3.3
21
-
-
-200A
MAX.
200
5.3
0.4
25
MAX.
g
200
200
150
150
BUK444-200A/B
30
25
Product Specification
TYP.
55
-
-200B
4.7
3.0
19
-200B
MAX.
d
200
s
4.7
0.5
25
MAX.
5
-
Rev 1.100
UNIT
UNIT
˚C
˚C
W
UNIT
V
V
V
A
A
A
K/W
K/W
W
V
A

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buk454-200 Summary of contents

Page 1

Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose ...

Page 2

Philips Semiconductors PowerMOS transistor STATIC CHARACTERISTICS ˚C unless otherwise specified hs SYMBOL PARAMETER V Drain-source breakdown (BR)DSS voltage V Gate threshold voltage GS(TO) I Zero gate voltage drain current DSS I Zero gate voltage drain current DSS ...

Page 3

Philips Semiconductors PowerMOS transistor AVALANCHE LIMITING VALUE ˚C unless otherwise specified hs SYMBOL PARAMETER W Drain-source non-repetitive DSS unclamped inductive turn-off energy Normalised Power Derating PD% 120 with heatsink compound 110 100 ...

Page 4

... Fig.9. Normalised drain-source on-state resistance DS(ON) BUK454-200A 4 150 - GS(TO) 4 Product Specification BUK444-200A/B gfs / S BUK454-200A ˚ f(I ); conditions Normalised RDS(ON) = f(Tj) a -60 -40 - 100 120 140 ...

Page 5

... C . Fig.15. Normalised avalanche energy rating. iss oss rss BUK454-200 160 VGS Fig.16. Avalanche energy test circuit Product Specification BUK444-200A BUK454-200A 150 25 1 VSDS / V ); conditions parameter T SDS GS WDSS 100 120 Ths / f(T ); conditions: I ...

Page 6

Philips Semiconductors PowerMOS transistor MECHANICAL DATA Dimensions in mm Net Mass 3.5 max not tinned Fig.17. SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) ...

Page 7

Philips Semiconductors PowerMOS transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet ...

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