buk454-200 NXP Semiconductors, buk454-200 Datasheet
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buk454-200
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buk454-200 Summary of contents
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Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose ...
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Philips Semiconductors PowerMOS transistor STATIC CHARACTERISTICS ˚C unless otherwise specified hs SYMBOL PARAMETER V Drain-source breakdown (BR)DSS voltage V Gate threshold voltage GS(TO) I Zero gate voltage drain current DSS I Zero gate voltage drain current DSS ...
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Philips Semiconductors PowerMOS transistor AVALANCHE LIMITING VALUE ˚C unless otherwise specified hs SYMBOL PARAMETER W Drain-source non-repetitive DSS unclamped inductive turn-off energy Normalised Power Derating PD% 120 with heatsink compound 110 100 ...
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... Fig.9. Normalised drain-source on-state resistance DS(ON) BUK454-200A 4 150 - GS(TO) 4 Product Specification BUK444-200A/B gfs / S BUK454-200A ˚ f(I ); conditions Normalised RDS(ON) = f(Tj) a -60 -40 - 100 120 140 ...
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... C . Fig.15. Normalised avalanche energy rating. iss oss rss BUK454-200 160 VGS Fig.16. Avalanche energy test circuit Product Specification BUK444-200A BUK454-200A 150 25 1 VSDS / V ); conditions parameter T SDS GS WDSS 100 120 Ths / f(T ); conditions: I ...
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Philips Semiconductors PowerMOS transistor MECHANICAL DATA Dimensions in mm Net Mass 3.5 max not tinned Fig.17. SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) ...
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Philips Semiconductors PowerMOS transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet ...