buk454-200 NXP Semiconductors, buk454-200 Datasheet - Page 2

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buk454-200

Manufacturer Part Number
buk454-200
Description
Buk444-200a/b Powermos Transistor
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK454-200
Manufacturer:
PHILIPS
Quantity:
5 000
Part Number:
buk454-200A
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Part Number:
buk454-200A/B
Manufacturer:
NXP
Quantity:
12 500
Part Number:
buk454-200B
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
April 1993
PowerMOS transistor
hs
SYMBOL PARAMETER
V
V
I
I
I
R
hs
SYMBOL PARAMETER
g
C
C
C
t
t
t
t
L
L
hs
SYMBOL
V
C
hs
SYMBOL PARAMETER
I
I
V
t
Q
DSS
DSS
GSS
d on
r
d off
f
DR
DRM
rr
fs
d
s
(BR)DSS
GS(TO)
isol
SD
DS(ON)
iss
oss
rss
isol
rr
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
V
V
V
V
V
V
I
CONDITIONS
V
V
V
V
R
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
CONDITIONS
-
-
I
I
V
D
F
F
CONDITIONS
R.H.
GS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
gen
= 5.3 A ; V
= 5.3 A; -dI
= 3.5 A
= V
= 200 V; V
= 200 V; V
= 25 V; I
= 0 V; I
= 30 V; V
= 10 V;
= 0 V; V
= 30 V; I
= 10 V; R
= 0 V; V
= 50
GS
65% ; clean and dustfree
; I
2
D
D
DS
R
D
D
GS
= 0.25 mA
= 1 mA
F
GS
= 30 V
/dt = 100 A/ s;
= 3.5 A
= 2.9 A;
GS
GS
DS
= 25 V; f = 1 MHz
= 0 V
= 50 ;
= 0 V; T
= 0 V; T
= 0 V
BUK444-200A
BUK444-200B
j
j
= 25 ˚C
=125 ˚C
MIN.
MIN.
MIN.
MIN.
200
2.1
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK444-200A/B
TYP.
TYP.
TYP.
TYP.
0.35
700
100
150
12
3.0
0.1
0.4
5.0
4.5
7.5
1.1
0.9
10
50
12
45
80
40
1
Product Specification
-
-
-
MAX.
MAX.
MAX.
1500
MAX.
100
850
160
120
4.0
1.0
0.4
0.5
5.3
1.3
10
80
20
70
60
21
-
-
-
-
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
UNIT
mA
nH
nH
nA
pF
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
A
V
A
C

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