DS1112SG55 DYNEX [Dynex Semiconductor], DS1112SG55 Datasheet

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DS1112SG55

Manufacturer Part Number
DS1112SG55
Description
Rectifier Diode
Manufacturer
DYNEX [Dynex Semiconductor]
Datasheet
Replaces January 2000 version, DS4181-4.0
FEATURES
APPLICATIONS
VOLTAGE RATINGS
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS1112SG58
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
www.dynexsemi.com
DS1112SG60
DS1112SG59
DS1112SG58
DS1112SG57
DS1112SG56
DS1112SG55
Type Number
Double Side Cooling
High Surge Capability
Rectification
Freewheel Diode
DC Motor Control
Power Supplies
Welding
Battery Chargers
Reverse Voltage
Repetitive Peak
6000
5900
5800
5700
5600
5500
V
RRM
V
V
RSM
Conditions
= V
RRM
+ 100V
KEY PARAMETERS
V
I
I
F(AV)
FSM
RRM
6000V
811A
10500A
See Package Details for further information.
Fig. 1 Package outline
Outline type code: G
Rectifier Diode
DS4181-5.0 August 2001
DS1112SG
DS1112SG
1/7

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DS1112SG55 Summary of contents

Page 1

... DS1112SG59 5900 DS1112SG58 5800 DS1112SG57 5700 DS1112SG56 5600 DS1112SG55 5500 Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS1112SG58 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order ...

Page 2

DS1112SG CURRENT RATINGS unless otherwise stated case Symbol Parameter Double Side Cooled I Mean forward current F(AV) I RMS value F(RMS) I Continuous (direct) forward current F Single Side Cooled (Anode side) I Mean forward ...

Page 3

SURGE RATINGS Parameter Symbol I Surge (non-repetitive) forward current FSM for fusing I Surge (non-repetitive) forward current FSM for fusing THERMAL AND MECHANICAL DATA Symbol Parameter R Thermal ...

Page 4

DS1112SG CHARACTERISTICS Symbol Parameter V Forward voltage FM I Peak reverse current RM Q Total stored charge S I Reverse recovery current rr V Threshold voltage TO r Slope resistance T CURVES 2500 Measured under pulse conditions 2000 1500 T ...

Page 5

Conditions 150˚ 100V 1000A F 1000 100 0.1 1.0 Rate of decay of forward current, dI Fig.4 Total stored charge 0.1 0.01 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ ...

Page 6

DS1112SG PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6 x 2.0 deep (in both electrodes) Note: 1. Package maybe supplied with pins and/or ...

Page 7

... Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. ...

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