k9f2g08q0m Samsung Semiconductor, Inc., k9f2g08q0m Datasheet - Page 3

• Manufacturer Part Number: k9f2g08q0m
• Description: 256m X 8 Bit / 128m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
PRODUCT LIST
GENERAL DESCRIPTION
Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost-
effective solution for the solid state mass storage market. A program operation can be performed in typical 300 s on the 2112-
byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)
or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(30ns, only X8 device) cycle time per byte or word(X16
device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller
automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.
Even the write-intensive systems can take advantage of the K9F2GXXX0M s extended reliability of 100K program/erase cycles by
providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2GXXX0M is an optimum solution for large
nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
FEATURES
- Memory Cell Array
- Data Register
- Page Program
- Block Erase
- Page Size
- Random Read : 25 s(Max.)
- Serial Access : 50ns(Min.)
Voltage Supply
Organization
Automatic Program and Erase
Page Read Operation
- Cache Register
- X8 device(K9F2G08X0M) : 2K-Byte
- X16 device(K9F2G16X0M) : 1K-Word
-1.8V device(K9F2GXXQ0M): 1.70V~1.95V
-3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V
-X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit
-X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit
-X8 device(K9F2G08X0M): (2K + 64)bit x8bit
-X16 device(K9F2G16X0M): (1K + 32)bit x16bit
-X8 device(K9F2G08X0M) : (2K + 64)bit x8bit
-X16 device(K9F2G16X0M) : (1K + 32)bit x16bit
-X8 device(K9F2G08X0M) : (2K + 64)Byte
-X16 device(K9F2G16X0M) : (1K + 32)Word
-X8 device(K9F2G08X0M) : (128K + 4K)Byte
-X16 device(K9F2G16X0M) : (64K + 2K)Word
K9F2G08Q0M-Y,P
K9F2G16Q0M-Y,P
K9F2G08U0M-Y,P
K9F2G16U0M-Y,P
Part Number
30ns(Min., K9F2G08U0M only)
1.70 ~ 1.95V
2.7 ~ 3.6V
Vcc Range
3
- Page Program time : 300 s(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- K9F2GXXX0M-YCB0/YIB0
- K9F2GXXX0M-PCB0/PIB0 : Pb-FREE PACKAGE
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Cache Program Operation for High Performance Program
Power-On Auto-Read Operation
Intelligent Copy-Back Operation
Unique ID for Copyright Protection
Package :
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
Organization
X16
X16
X8
X8
FLASH MEMORY
Preliminary
PKG Type
TSOP1