k9f2g08uxa Samsung Semiconductor, Inc., k9f2g08uxa Datasheet - Page 14

• Manufacturer Part Number: k9f2g08uxa
• Description: 256m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F2G08R0A
K9F2G08U0A
AC Characteristics for Operation
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5µs.
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
CE High to ALE or CLE Don’t Care
RE High to Output Hold
RE Low to Output Hold
CE High to Output Hold
RE High Hold Time
Output Hi-Z to RE Low
RE High to WE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
RE Pulse Width during Busy State
Read Cycle Time during Busy State
RE Access Time during Busy State
RE Pulse Width
2. This parameter (
Parameter
t
RPB
/
t
RCB
/
t
REAB
) must be used only for 1.8V device.
Symbol
t
t
t
t
REAB
t
t
t
RPB
RCB
t
t
t
t
t
RHOH
RLOH
t
t
t
t
RHW
WHR
t
t
t
COH
t
CLR
t
REA
CEA
RHZ
CHZ
CSD
REH
RST
WB
t
t
AR
RR
RP
RC
IR
R
(2)
(2)
(2)
14
1.8V
100
10
10
20
21
42
15
15
10
60
35
50
0
5
0
-
-
-
-
-
-
-
-
Min
3.3V
100
10
10
20
12
25
15
15
10
60
0
5
0
-
-
-
-
-
-
-
-
-
-
5/10/500
FLASH MEMORY
1.8V
100
100
25
30
35
30
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
(1)
Max
5/10/500
3.3V
100
100
25
20
25
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
(1)
Unit
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns