k9f2g08uxa Samsung Semiconductor, Inc., k9f2g08uxa Datasheet - Page 3

• Manufacturer Part Number: k9f2g08uxa
• Description: 256m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F2G08R0A
K9F2G08U0A
GENERAL DESCRIPTION
PRODUCT LIST
• Voltage Supply
• Organization
• Automatic Program and Erase
• Page Read Operation
(*K9F2G08R0A: tRC = 42ns(Min))
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as com-
mand input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and
internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reli-
ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
256M x 8 Bit NAND Flash Memory
FEATURES
- 1.65V ~ 1.95V
- 2.70V ~ 3.60V
- Memory Cell Array : (256M + 8M) x 8bit
- Data Register : (2K + 64) x 8bit
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Size : (2K + 64)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
K9F2G08U0A-P
K9F2G08R0A-J
K9F2G08U0A-I
Part Number
2.70 ~ 3.60V
1.65 ~ 1.95V
Vcc Range
3
• Fast Write Cycle Time
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
• Reliable CMOS Floating-Gate Technology
ECC)
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
- Program/Erase Lockout During Power Transitions
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
- Data Retention : 10 Years
- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE
- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
- K9F2G08U0A-ICB0/IIB0
63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
Organization
X8
FLASH MEMORY
PKG Type
52ULGA
TSOP1
FBGA