at-32032 Avago Technologies, at-32032 Datasheet - Page 8

• Manufacturer Part Number: at-32032
• Description: Low Current, High Performance Npn Silicon Bipolar Transistor
• Manufacturer: Avago Technologies

gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
MSG = |S
k =
AT-32032 Typical Scattering Parameters,
AT-32032 Typical Noise Parameters,
Common Emitter, Z
Freq.
10.0
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
1 – |S
Freq.
GHz
0.9
1.8
2.0
2.5
3.0
3.5
4.0
2 * |S
S
S
11
21
12
21
|
| / |S
2
(k
12
– |S
| |S
± √
Mag
12
0.940
0.732
0.518
0.484
0.342
0.291
0.265
0.212
0.238
0.306
0.383
0.456
0.523
0.573
0.620
21
|
22
k
|
|
F
2
2
dB
1.0
1.2
1.3
1.5
1.7
1.9
2.1
–1)
min
+ |D|
S
O
11
= 50 Ω, 5 V, I
2
-124
-142
-153
; D = S
Ang
--14
151
103
-13
-56
-87
-93
70
50
34
19
2
Mag
0.48
0.445
0.44
0.43
0.47
0.53
0.58
11
S
22 –
17.5
14.9
12.4
11.6
-0.1
-0.7
-1.3
-2.0
dB
9.0
7.8
7.1
4.5
2.7
1.5
0.6
C
Γ
S
opt
= 2 mA
12
S
21
Ang
-154
-123
118
134
172
-98
50
Mag
7.500
5.588
4.165
3.814
2.824
2.466
2.267
1.670
1.367
1.186
1.067
0.990
0.918
0.857
0.792
S
Common Emitter, Z
21
ohms
14.7
11.3
23.7
R
Ang
7.4
5.8
3.7
5.0
167
129
104
-26
-43
-59
-75
-90
n
99
78
67
61
34
11
-8
-36.0
-23.8
-21.1
-20.6
-19.0
-18.1
-17.5
-14.0
-10.7
G
dB
14.8
10.1
-7.6
-5.2
-3.3
-2.3
-1.9
-2.0
dB
assoc
9.5
8.5
7.7
7.0
6.4
O
= 50 Ω, V
0.016
0.064
0.088
0.093
0.112
0.125
0.134
0.199
0.293
0.416
0.550
0.682
0.771
0.805
0.791
Mag
S
12
CE
25
20
15
10
= 5 V, I
0
5
Figure 13. Gain vs. Frequency at
5 V, 2 mA.
Note: dB(|S
0
8
dB(S[2,1])
Ang
1
gmax
-31
-53
-73
83
60
51
50
49
49
50
50
43
30
13
-8
C
FREQUENCY (GHz)
k
= 2 mA
2
21
|) = 20 * log(|S
3
0.375
0.373
0.437
0.515
0.981
0.842
0.714
0.699
0.632
0.606
0.596
0.566
0.549
0.515
0.453
Mag
4
S
22
5
Ang
-102
-134
-177
130
-22
-29
-30
-36
-40
-43
-58
-77
21
86
54
6
-5
1.25
1
0.75
0.5
0.25
0
|)