at-32032 Avago Technologies, at-32032 Datasheet - Page 9

• Manufacturer Part Number: at-32032
• Description: Low Current, High Performance Npn Silicon Bipolar Transistor
• Manufacturer: Avago Technologies

gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
MSG = |S
k =
AT-32032 Typical Scattering Parameters,
AT-32032 Typical Noise Parameters,
Common Emitter, Z
Freq.
10.0
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
1 – |S
Freq.
GHz
0.9
1.8
2.0
2.5
3.0
3.5
4.0
2 * |S
S
S
11
21
12
21
|
| / |S
2
(k
12
– |S
| |S
± √
Mag
12
0.860
0.496
0.298
0.269
0.168
0.133
0.116
0.086
0.121
0.194
0.287
0.390
0.491
0.570
0.640
21
|
22
k
|
|
F
2
2
dB
1.0
1.2
1.3
1.4
1.6
1.8
2.0
–1)
min
+ |D|
S
O
11
= 50 Ω, V
2
; D = S
Ang
-119
-135
-146
150
-19
-67
-90
-96
98
70
57
43
28
10
-9
Mag
0.38
0.335
0.33
0.35
0.40
0.47
0.54
11
S
CE
22 –
23.8
18.8
14.9
14.1
11.0
= 5 V, I
-1.0
dB
Γ
9.7
8.9
6.1
4.3
3.1
2.3
1.6
0.8
0
S
opt
12
S
21
-146
-118
Ang
124
140
179
C
-92
52
= 5 mA
15.523
8.705
5.569
5.067
3.558
3.046
2.782
2.011
1.640
1.434
1.300
1.198
1.101
0.997
0.891
Mag
S
Common Emitter, Z
21
ohms
11.7
11.5
22.0
R
Ang
6.3
5.3
4.3
5.9
160
114
-25
-44
-62
-79
-95
92
88
71
63
58
34
13
n
-6
G
-36.4
-25.4
-22.0
-21.4
-18.5
-17.1
-16.2
-12.7
16.1
11.2
10.5
dB
-9.9
-7.6
-5.7
-4.0
-2.8
-2.2
-2.1
dB
assoc
9.2
8.2
7.5
6.8
O
= 50 Ω, V
0.015
0.054
0.079
0.085
0.119
0.140
0.154
0.232
0.319
0.417
0.521
0.631
0.722
0.774
0.781
Mag
S
CE
12
25
20
15
10
= 5 V, I
5
0
Figure 14. Gain vs. Frequency at
5 V, 5 mA.
Note: dB(|S
0
9
dB(S[2,1])
1
Ang
gmax
-10
-30
-51
-72
80
63
61
61
59
58
57
48
37
23
C
8
FREQUENCY (GHz)
k
= 5 mA
2
21
|) = 20 * log(|S
3
Mag
0.949
0.690
0.580
0.570
0.530
0.514
0.508
0.483
0.461
0.422
0.354
0.274
0.273
0.361
0.464
4
S
22
5
Ang
-124
-166
137
21
-25
-28
-29
-33
-36
-39
-54
-72
-95
91
57
6
-9
0
1.25
1
0.75
0.5
0.25
|)