IRF6N60FP SUNTAC [Suntac Electronic Corp.], IRF6N60FP Datasheet
IRF6N60FP
Related parts for IRF6N60FP
IRF6N60FP Summary of contents
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GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy ...
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... Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds (1) VDD = 50V (2) Pulse Width and frequency is limited by T ORDERING INFORMATION Part Number IRF6N60...............................................TO-220 ....................IRF6N60FP TEST CIRCUIT Rating and thermal response ...
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ELECTRICAL CHARACTERISTICS Unless otherwise specified Characteristic Drain-Source Breakdown Voltage ( 250 Drain-Source Leakage Current (V = 600 480 ...
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TYPICAL ELECTRICAL CHARACTERISTICS IRF6N60 MOSFET P OWER Page 4 ...
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PACKAGE DIMENSION Front View Front View TO-220 A c1 φ Side View TO-220FP Side View Back View IRF6N60 POWER MOSFET PIN ...