IRF6N60FP SUNTAC [Suntac Electronic Corp.], IRF6N60FP Datasheet - Page 2

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IRF6N60FP

Manufacturer Part Number
IRF6N60FP
Description
POWER MOSFET
Manufacturer
SUNTAC [Suntac Electronic Corp.]
Datasheet
ABSOLUTE MAXIMUM RATINGS
Drain to Current
Gate-to-Source Voltage
Total Power Dissipation
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
(V
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
(1) VDD = 50V, ID = 6A
(2) Pulse Width and frequency is limited by T
ORDERING INFORMATION
....................IRF6N60FP
TEST CIRCUIT
DD
TO-220
TO-220FP
= 100V, V
Part Number
IRF6N60...............................................TO-220
GS
= 10V, I
Pulsed
Continuous
Junction to Case
Junction to Ambient
L
= 6A, L = 10mH, R
Continue
Non-repetitive
Rating
Test Circuit – Avalanche Capability
G
J(max)
TO-220 Full Pak
= 25 )
Package
and thermal response
T
J
= 25
Symbol
T
J
V
V
, T
E
I
P
T
GSM
I
DM
GS
D
AS
JC
JA
D
L
STG
P
-55 to 150
OWER
Value
62.5
±20
±40
125
180
260
6.0
1.0
18
45
IRF6N60
MOSFET
Page 2
Unit
mJ
W
A
V
V
/W

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