SI4310BDY-E3 VISHAY [Vishay Siliconix], SI4310BDY-E3 Datasheet - Page 8

• Manufacturer Part Number: SI4310BDY-E3
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Si4310BDY
Vishay Siliconix
www.vishay.com
8
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0001
0.001
0.01
100
0.1
0.01
0.01
10
1
0.1
0.1
2
1
2
1
0
10
10
Reverse Current vs. Junction Temperature
−4
−4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
25
Single Pulse
T
30 V
J
− Junction Temperature (_C)
50
10
−3
Single Pulse
10
75
20 V
−3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
−2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
150
New Product
−2
10
−1
10
1
−1
0.1
5
1
0
T
J
= 150_C
V
10
F
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.2
P
− Forward Voltage Drop (V)
DM
Forward Voltage Drop
JM
− T
t
1
A
1
= P
t
2
DM
0.4
Z
thJA
thJA
100
S-41530—Rev. A, 16-Aug-04
t
t
1
2
(t)
Document Number: 73064
= 92_C/W
T
J
CHANNEL-2
= 25_C
SCHOTTKY
0.6
600
10
0.8