SI1303DL-T1 VISHAY [Vishay Siliconix], SI1303DL-T1 Datasheet
SI1303DL-T1
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SI1303DL-T1 Summary of contents
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... Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71075 S-61007–Rev. D, 12-Jun-06 FEATURES • TrenchFET I (A) D • 2.5 V Rated - 0.72 - 0.68 - 0.56 SOT-323 SC-70 (3-LEADS) Marking Code Top View Si1303DL-T1-E3 (Lead (Pb)-free °C, unless otherwise noted ° ° ° °C A Symbol t ≤ 5 sec R ...
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... Si1303DL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... T 0.01 0.001 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71075 S-61007–Rev. D, 12-Jun- 4 °C J 0.9 1.2 1.5 Si1303DL Vishay Siliconix 250 C iss 200 150 100 C oss 50 C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 ...
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... Si1303DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 0.4 0 250 µA D 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...