SI4411DY-T1 VISHAY [Vishay Siliconix], SI4411DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4411DY-T1
• Description: P-Channel 30-V (D-S) MOSFE
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72149
S-03539—Rev. B, 24-Mar-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
0.016
0.012
0.008
0.004
0.000
0.1
50
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 13 A
0.2
On-Resistance vs. Drain Current
= 15 V
10
10
V
T
V
J
SD
Q
GS
= 150_C
g
- Source-to-Drain Voltage (V)
= 4.5 V
I
0.4
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
20
20
0.6
30
30
V
0.8
GS
= 10 V
T
40
40
J
= 25_C
1.0
1.2
50
50
New Product
0.030
0.024
0.018
0.012
0.006
0.000
5500
4400
3300
2200
1100
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 13 A
C
rss
= 10 V
2
6
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
iss
25
Capacitance
C
12
4
oss
I
D
Vishay Siliconix
50
= 13 A
18
6
75
Si4411DY
100
24
www.vishay.com
8
125
150
10
30
3