SI4463BDY-E3 VISHAY [Vishay Siliconix], SI4463BDY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4463BDY-E3
• Description: P-Channel 2.5-V (G-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4463BDY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.2
−0.4
0.6
0.4
0.2
0.0
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
I
D
T
Threshold Voltage
= 250 mA
J
− Temperature (_C)
25
10
−3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
r
DS(on)
0.01
100
0.1
10
10
100
1
0.1
Limited
−2
Limited
125
I
D(on)
Single Pulse
T
Square Wave Pulse Duration (sec)
C
V
= 25_C
150
DS
New Product
− Drain-to-Source Voltage (V)
Safe Operating Area
10
1
−1
BV
DSS
Limited
10
1
50
40
30
20
10
I
DM
0
0.01
Limited
Single Pulse Power, Junction-to-Ambient
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
− T
t
A
Time (sec)
1
1
= P
t
2
DM
Z
thJA
thJA
100
S-40433—Rev. A, 15-Mar-04
t
t
1
2
(t)
Document Number: 72789
10
= 70_C/W
100
600
600