SI4500BDY-E3 VISHAY [Vishay Siliconix], SI4500BDY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4500BDY-E3
• Description: Complementary MOSFET Half-Bridge (N- and P-Channel)
• Manufacturer: VISHAY [Vishay Siliconix]

Si4500BDY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
10
−0.0
−0.2
−0.4
−0.6
0
0.4
0.2
0
−50
Source-Drain Diode Forward Voltage
−25
0.3
V
SD
T
0
J
− Source-to-Drain Voltage (V)
= 150_C
0.6
T
Threshold Voltage
I
D
J
− Temperature (_C)
= 250 mA
25
0.9
50
T
J
75
= 25_C
1.2
0.01
100
0.1
100
10
1
0.1
r
Limited
DS(on)
125
I
D(on)
Single Pulse
T
A
Limited
1.5
V
150
= 25_C
DS
− Drain-to-Source Voltage (V)
Safe Operating Area
1
BV
DSS
Limited
10
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
80
70
60
50
40
30
20
10
I
0.001
0
DM
0
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
Limited
On-Resistance vs. Gate-to-Source Voltage
0.01
I
D
100
= 3.3 A
V
1
GS
Single Pulse Power
− Gate-to-Source Voltage (V)
0.1
Time (sec)
2
I
D
= 9.1 A
1
S-41428—Rev. B, 26-Jul-04
Document Number: 72281
3
N−CHANNEL
10
4
100
600
5