SI4808DY-T1 VISHAY [Vishay Siliconix], SI4808DY-T1 Datasheet

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... Top View Ordering Information: Si4808DY Si4808DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

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... Si4808DY Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance b b Diode Forward Voltage Diode Forward Voltage ...

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... Total Gate Charge (nC) g Document Number: 71157 S-03951—Rev. B, 26-May- 2.0 2.5 3.0 1000 800 600 400 200 1.6 1.4 1.2 1.0 0.8 0 Si4808DY Vishay Siliconix MOSFET Transfer Characteristics 125_C C 4 25_C - 55_C 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss ...

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... Si4808DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.2 = 250 0.0 - 0.2 - 0.4 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

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... V - Drain-to-Source Voltage (V) DS Document Number: 71157 S-03951—Rev. B, 26-May- Square Wave Pulse Duration (sec) 100 125 150 Si4808DY Vishay Siliconix -1 1 SCHOTTKY Forward Voltage Drop 150_C 25_C J 1 0.0 0.3 0.6 0 Forward Voltage Drop (V) F MOSFET 10 1 ...