SI4814BDY VISHAY [Vishay Siliconix], SI4814BDY Datasheet - Page 2

• Manufacturer Part Number: SI4814BDY
• Description: Dual N-Channel, 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

MOSFET SPECIFICATIONS (T
Dynamic
Total Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Turn-On Time
Turn-Off Time
Source-Drain Reverse Recovery Time
SCHOTTKY SPECIFICATIONS (T
Static
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
Document Number 74072
11-May-05
Parameter
Parameter
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J
= 25
Irm
V
J
F
= 25
t
Symbol
Qgd
t
Qgs
d(on)
d(off)
Qg
Rg
t
t
t
O
rr
Symbol
r
f
C
C UNLESS OTHERWISE NOTED)
T
T
T
T
T
J
J
J
T
J
J
O
= 25
= 100
= 125
= 125
= 25
C UNLESS OTHERWISE NOTED)
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
o
C
o
o
o
o
C
C
C
C
Min
Min
0.5
0.5
Si4814BDY
Si4814BDY
0.004
Typ
Typ
0.47
0.36
6.6
8.9
2.9
3.4
2.3
2.4
1.9
2.3
0.7
3.0
11
13
21
27
28
24
50
8
9
6
9
Specification Comparison
Max
Max
0.100
0.50
0.42
2.9
3.5
10
14
15
15
18
20
32
40
10
15
40
35
10
20
Min
Min
0.5
0.5
勝特力科技 886-3-5753170
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Si4814DY
Si4814DY
0.004
Typ
Typ
0.47
0.36
6.5
9.7
1.5
2.6
2.7
3.8
1.6
1.8
0.7
3.0
12
13
13
13
22
29
12
50
46
50
8
Vishay Siliconix
Max
Max
0.100
0.50
0.42
2.6
3.1
10
15
20
20
20
20
35
45
15
20
80
80
10
20
www.vishay.com
Unit
Unit
mA
nC
nC
pF
ns
Ω