SI4876DY-T1 VISHAY [Vishay Siliconix], SI4876DY-T1 Datasheet - Page 2

• Manufacturer Part Number: SI4876DY-T1
• Description: N-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Notes
a.
b.
www.vishay.com
Si4876DY
Vishay Siliconix
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
0
0.0
b
Parameter
0.5
V
GS
V
a
a
DS
1.0
= 5 thru 2.5 V
Output Characteristics
a
- Drain-to-Source Voltage (V)
1.5
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
2.0
2.5
Symbol
V
r
r
3.0
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
2.0 V
1.5 V
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
3.5
4.0
V
V
I
DS
D
DS
^ 1 A, V
= 10 V, V
V
I
= 16 V, V
V
V
V
F
V
V
V
V
V
DS
DS
DS
Test Condition
GS
= 3 A, di/dt = 100 A/ms
DS
GS
I
DD
DD
DS
S
= 0 V, V
w 5 V, V
= V
= 3 A, V
= 4.5 V, I
= 16 V, V
= 10 V, I
= 10 V, R
= 10 V, R
= 2.5 V, I
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 4.5 V, I
= 0 V, T
D
GS
GS
D
GS
D
L
L
= 250 mA
D
= "12 V
= 21 A
= 0 V
= 10 W
= 10 W
= 17 A
= 4.5 V
= 21 A
= 0 V
J
G
D
= 85_C
50
40
30
20
10
= 21 A
= 6 W
0
0.0
0.5
V
GS
Transfer Characteristics
Min
- Gate-to-Source Voltage (V)
0.6
2.0
50
T
25_C
C
1.0
= 125_C
0.0037
0.0058
Typ
175
0.8
2.7
17
55
13
40
30
70
56
S-03950—Rev. C, 26-May-03
11
Document Number: 71312
1.5
0.0075
Max
"100
0.005
260
105
1.2
4.6
20
80
60
45
85
1
- 55_C
2.0
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
S
V
2.5