SI3200-X-FS SILABS [Silicon Laboratories], SI3200-X-FS Datasheet - Page 43

• Manufacturer Part Number: SI3200-X-FS
• Manufacturer: SILABS [Silicon Laboratories]

When generating a high-voltage ringing amplitude using
the Si3220, the power dissipated during the OHT state
typically increases due to operating from the ringing
battery supply in this mode. To reduce power, the
Si3220/Si3200
accommodate up to three separate battery supplies by
implementing a secondary battery switch using a few
low-cost external components as illustrated in Figure
22.
The Si3220’s BATSEL pin is used to switch between the
V
BHI
(typically –48 V) and V
V
chipset
V
V
BRING
BLO
BHI
Component
R101
R102
R103
provides
Figure 20. 3-Battery Switching with Si3220/Si3200
D1
Q1
Q2
Table 23. Three-Battery Switching Components
BLO
0.1 µF
0.1 µF
(typically –24 V) rails
VBATH
VBAT
VBATL
the
Si3200
806 kΩ
402 k Ω ,1/10 W,± 1%
10 k Ω ,1/10 W, ± 5%
ability
BATSEL
200 V, 200 mA
1/10 W, ± 5%
100 V PNP
100 V NPN
Value
Rev. 1.2
to
using the switch internal to the Si3200. The Si3220’s
GPO pin is used along with the external transistor circuit
to switch the V
onto the Si3200’s V
GPO signal is driven automatically by the ringing
cadence provided that the RRAIL bit of the RLYCON
register is set to 1 (signifying that a third battery rail is
present).
SVBAT
IN4003
40.2 kΩ
D1
R9
Si3220
R102
2.4 k Ω for V
Q2
3.9 k Ω for V
CXT5551
1N4003 or similar
Q1
BRING
CXT5401 or
CXT5551 or
Comments
10 kΩ
R101
similar
similar
BAT
CXT5401
rail (the ringing voltage battery rail)
R103
402 kΩ
pin when ringing is enabled. The
DD
DD
=3.3 V
=5 V
Si3220/25
43