SI3812DV-T1 VISHAY [Vishay Siliconix], SI3812DV-T1 Datasheet - Page 3

• Manufacturer Part Number: SI3812DV-T1
• Description: N-Channel 20-V (D-S) MOSFET With Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 71069
S-31725—Rev. E, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.5
0.4
0.3
0.2
0.1
0.0
4.5
3.6
2.7
1.8
0.9
0.0
10
8
6
4
2
0
0.0
0
0
V
I
V
D
DS
1
GS
= 2.4 A
On-Resistance vs. Drain Current
0.5
= 10 V
1
V
= 2.5 V
DS
Q
Output Characteristics
g
2
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
1.0
2
3
V
GS
3 V
= 4.5 thru 3.5 V
2.5 V
4
1.5
1.5 V
3
2 V
V
5
GS
2.0
= 4.5 V
4
6
2.5
5
7
300
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
50
8
6
4
2
0
0
0.0
- 50
0
On-Resistance vs. Junction Temperature
0.5
- 25
V
V
4
DS
GS
T
1.0
V
I
J
Transfer Characteristics
0
D
GS
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
= 2.4 A
= 4.5 V
1.5
25
Capacitance
8
Vishay Siliconix
C
2.0
C
C
50
T
oss
iss
rss
25_C
C
= - 55_C
12
2.5
75
Si3812DV
100
3.0
www.vishay.com
MOSFET
16
125_C
125
3.5
150
4.0
20
3