SI3900DV-T1 VISHAY [Vishay Siliconix], SI3900DV-T1 Datasheet - Page 4

• Manufacturer Part Number: SI3900DV-T1
• Description: Dual N-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si3900DV
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?71178.
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.2
−0.4
−0.6
0.4
0.2
0.01
0.01
0.1
0.1
−50
2
1
2
1
10
10
−4
−4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
−25
0
Single Pulse
T
Threshold Voltage
I
D
J
10
− Temperature (_C)
= 250 mA
25
−3
Single Pulse
10
50
−3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
−2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
150
For related documents such as package/tape drawings, part marking, and reliability data, see
−2
10
−1
10
1
−1
8
6
4
2
0
0.01
Single Pulse Power, Junction-to-Ambient
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
0.1
− T
A
t
1
1
= P
Time (sec)
t
2
DM
Z
thJA
thJA
100
t
t
(t)
1
2
S-50329—Rev. C, 28-Feb-05
= 130_C/W
1
Document Number: 71178
600
10
10
30