SI5473DC-T1 VISHAY [Vishay Siliconix], SI5473DC-T1 Datasheet - Page 2

• Manufacturer Part Number: SI5473DC-T1
• Description: P-Channel 12-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Notes
a.
b.
www.vishay.com
2
Si5473DC
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
15
10
5
0
0
b
Parameter
1
V
a
a
DS
V
GS
Output Characteristics
a
- Drain-to-Source Voltage (V)
= 5 thru 2 V
2
J
a
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
t
t
SD
t
4
rr
fs
gs
gd
r
f
g
1.5 V
1 V
5
New Product
V
I
V
DS
D
DS
^ - 1 A, V
= - 6 V, V
I
V
F
= - 9.6 V, V
V
V
V
V
V
V
DS
GS
= - 1.1 A, di/dt = 100 A/ms
GS
GS
I
DS
DS
V
V
V
S
DS
Test Condition
DD
DD
DS
= - 1.1 A, V
= - 4.5 V, I
p - 5 V, V
= - 2.5 V, I
= - 1.8 V, I
= V
= - 9.6 V, V
= - 5 V, I
= - 6 V, R
= - 6 V, R
= 0 V, V
GEN
GS
GS
GS
, I
= - 4.5 V, I
= - 4.5 V, R
D
= 0 V, T
D
GS
= - 250 mA
GS
D
D
D
GS
= - 5.9 A
GS
L
L
= - 5.3 A
= - 2.2 A
= - 5.9 A
= - 4.5 V
= 6 W
= 6 W
= "8 V
= 0 V
= 0 V
D
J
20
16
12
G
= 85_C
= - 5.9 A
8
4
0
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
25_C
- 0.40
Min
- 20
T
- Gate-to-Source Voltage (V)
C
= - 55_C
1.0
0.022
0.028
0.036
Typ
- 0.8
145
3.1
6.0
20
21
25
50
90
70
- 55_C
S-31265—Rev. A, 16-Jun-03
1.5
Document Number: 72261
0.0335
"100
Max
0.027
0.045
- 1.0
- 1.2
220
135
105
32
40
75
- 1
- 5
2.0
Unit
nC
nA
mA
mA
ns
W
V
A
S
V
2.5