SI5855DC-T1 VISHAY [Vishay Siliconix], SI5855DC-T1 Datasheet - Page 5

• Manufacturer Part Number: SI5855DC-T1
• Description: P-Channel 1.8-V (G-S) MOSFET With Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72232
S-31406—Rev. A, 07-Jul-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0001
0.001
0.01
100
0.1
0.01
0.01
10
0.1
0.1
1
- 50
2
1
2
1
10
10
Reverse Current vs. Junction Temperature
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
T
Single Pulse
J
0
20 V
- Junction Temperature (_C)
Single Pulse
10
25
-3
10 V
10
50
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
-2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
150
New Product
-2
10
-1
10
1
-1
0.1
10
1
0.0
T
0.1
J
= 150_C
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
V
P
DM
F
Forward Voltage Drop
JM
0.2
- Forward Voltage Drop (V)
- T
t
1
A
1
= P
t
2
Vishay Siliconix
DM
0.3
Z
thJA
100
thJA
t
t
1
2
(t)
= 90_C/W
T
0.4
Si5855DC
J
= 25_C
SCHOTTKY
www.vishay.com
MOSFET
0.5
600
10
0.6
5