FLL1200IU-3 EUDYNA [Eudyna Devices Inc], FLL1200IU-3 Datasheet

FLL1200IU-3

Manufacturer Part Number

FLL1200IU-3

Description

L-Band High Power GaAs FET

Manufacturer

EUDYNA [Eudyna Devices Inc]

Datasheet

1.FLL1200IU-3.pdf (4 pages)

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Edition 1.4

December 1999

DESCRIPTION

The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that

offers ease of matching, greater consistency and a broader bandwidth for high

power L-band amplifiers. This product is targeted to reduce the size and

complexity of highly linear, high power base station transmitting amplifiers.

This new product is uniquely suited for use in Wireless Local Loop (WLL) base

station amplifiers as it offers high gain, long term reliability and ease of use.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

CASE STYLE: IU

Note 1: The device shall be measured at a constant V GS condition.

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

FEATURES

• Push-Pull Configuration

• High Power Output: 120W (Typ.)

• High PAE: 44%.

• Broad Frequency Range: 2400 to 2500 MHz.

• Suitable for class AB operation.

APPLICATIONS

• Solid State Base-Station Power Amplifier.

• WLL Communication Systems.

Drain Current

Transconductance

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Output Power

Linear Gain

Drain Current

Power-Added Efficiency

Thermal Resistance

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

3. The operating channel temperature (T ch ) should not exceed 145°C.

1. The drain-source operating voltage (V DS ) should not exceed 12 volts.

2. The forward and reverse gate currents should not exceed 156.0mA and -57.6mA respectively with

gate resistance of 10Ω.

Parameter

Item

Symbol

stg

DSR

DSS

GSO

add

out

f = 2.5 GHz

Pin = 41.0dBm

Note 1

Channel to Case

= 5.0A

= -2.88mA

= 5V, V

= 5V, I

= 12V

Tc = 25°C

Condition

Conditions

= 28.8A

= 2.88A

= 0V

L-Band High Power GaAs FET

Min.

49.8

10.0

-1.0

-65 to +175

-5

Rating

187.5

+175

FLL1200IU-3

-5

Limits

Typ.

50.8

11.0

-2.0

0.6

Max.

-3.5

0.8

Unit

°C

°C/W

dBm

Unit

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FLL1200IU-3 Summary of contents

Page 1

... Broad Frequency Range: 2400 to 2500 MHz. • Suitable for class AB operation. DESCRIPTION The FLL1200IU 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers ...

Page 2

... FLL1200IU-3 L-Band High Power GaAs FET POWER DERATING CURVE 200 150 100 100 Ambient Temperature (° OUTPUT POWER & η add vs. INPUT POWER 12V 5. 2.5GHz 150 200 OUTPUT POWER vs. FREQUENCY ...

Page 3

... FLL1200IU-3 S22 MAG ANG .894 166.2 .883 165.0 .868 163.6 .853 162.3 .837 161.3 .819 160.2 .801 158.8 .780 157.4 .760 155.9 .734 153.8 .699 151 ...

Page 4

... FLL1200IU-3 L-Band High Power GaAs FET 12-R0.5 6 4-R1.3 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...

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