FMM5057X EUDYNA [Eudyna Devices Inc], FMM5057X Datasheet

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FMM5057X

Manufacturer Part Number
FMM5057X
Description
C-Band Power Amplifier MMIC
Manufacturer
EUDYNA [Eudyna Devices Inc]
Datasheet
Edition 1.1
January 2006
FEATURES
•High Output Power; P1dB = 34 dBm (Typ.)
•High Linear Gain; GL = 27 dB(Typ.)
•Frequency Band ; 7.1 - 8.5 GHz
•High Linearity ; OIP3 = 42.5 dBm(typ.)
•Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FMM5057X is a power amplifier MMIC that contains a four
stage amplifier, internally matched, for standard communications
band in 7.1 to 8.5GHz frequency range. This product is well
suited for point-to-point radio applications.
Eudyna’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Drain-Source Voltage
Gate-Source Voltage
Input Power
Strage Temperature
RECOMMENDED OPERATING CONDITIONS
Drain-Source Voltage
Input Power
Drain Current without RF
Operating Backside Temperature
This Product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25℃ ℃ ℃ ℃ )
Frequency Range
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Gain Flatness
Input Return Loss
Output Return Loss
Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1)
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Item
Item
Item
IDD(DC)
Symbol
Symbol
Symbol
RLout
G1dB
P1dB
VDD
VGG
VDD
RLin
Tstg
Top
ΔG
Pin
Pin
f
1
VDD=10.0V
IDD(DC)=1200mA typ.
Zs=Zl=50ohm
Class 0
Test Conditions
C-Band Power Amplifier MMIC
 -55 to +125
 -40 to +85
Condition
≦1200
Rating
≦10
12
14
12
-3
Min.
32.0
G.C.P. : Gain Compression Point
7.1
7.0
23
-
-
~ 199V
+/- 1.2 +/-2.0
Limits
FMM5057X
Typ.
34.0
26
10
10
http://www.eudyna.com/
-
Max.
8.5
-
-
-
-
dBm
dBm
dBm
Unit
Unit
Unit
GHz
mA
dB
dB
dB
dB
V
V
V

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FMM5057X Summary of contents

Page 1

... Band ; 7.1 - 8.5 GHz •High Linearity ; OIP3 = 42.5 dBm(typ.) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5057X is a power amplifier MMIC that contains a four stage amplifier, internally matched, for standard communications band in 7.1 to 8.5GHz frequency range. This product is well suited for point-to-point radio applications. ...

Page 2

... FMM5057X C-Band Power Amplifier MMIC Output Power vs. Frequency VDD=10V, IDD(DC)=1200mA 38 Pin=12dBm 36 34 Pin=8dBm P1dB 32 30 Pin=4dBm 28 26 Pin=0dBm 24 22 6.3 6.7 7.1 7.5 7.9 Frequency [GHz] Power Added Efficiency vs. Frequency VDD=10V, IDD(DC)=1200mA 32 28 Pin=12dBm 24 P1dB 20 Pin=8dBm Pin=4dBm 4 Pin=0dBm 0 6.3 6.7 7.1 7.5 7.9 Frequency [GHz] Output Power, Drain Current vs. Input Power ...

Page 3

... IMD vs. Frequency VDD=10V, IDD(DC)=1200mA, Pout=20dBm S.C.L. -30 -35 -40 IM3 -45 -50 -55 -60 6.3 6.7 7.1 7.5 7.9 Frequency [GHz] -20 -25 -30 -35 -40 -45 -50 -55 -60 8.3 8.7 9 FMM5057X C-Band Power Amplifier MMIC IMD vs. Output Power VDD=10V, IDD(DC)=1200mA 7.1GHz 7.8GHz 8.5GHz IM3 2-tone Total Output Power [dBm ...

Page 4

... FMM5057X C-Band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Voltage IDD(DC)=1200mA, f=7.1GHz 10V 32 Pout Drain Current Input Pow er [dBm] Output Power, Drain Current vs. Input Power by Drain Voltage IDD(DC)=1200mA, f=8.5GHz ...

Page 5

... FMM5057X C-Band Power Amplifier MMIC Output Power, Drain Current VDD=10V, f=7.7GHz 800m A 1200m A 1600m A Pout Drain Current Input Pow er [dBm ] VDD=10V 7.1GHz 7.7GHz 8.5GHz ...

Page 6

... FMM5057X C-Band Power Amplifier MMIC IMD vs. Output Power by Drain Voltage IDD(DC)=1200mA, f=7.1GHz -10 6V -15 8V 10V -20 -25 -30 IM3 -35 -40 -45 -50 -55 - 2-tone Total Pout [dBm] IMD vs. Output Power by Drain Voltage IDD(DC)=1200mA, f=8.5GHz -10 6V -15 8V 10V -20 -25 -30 IM3 -35 -40 ...

Page 7

... Total Pout [dBm] -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 - FMM5057X C-Band Power Amplifier MMIC IMD vs. Output Power by Drain Current VDD=10V, f=7.7GHz 800mA 1200mA 1600mA IM3 2-tone Total Pout [dBm ...

Page 8

... FMM5057X C-Band Power Amplifier MMIC ■ ■ ■ ■ S-PARAMETER -10 -15 -20 -25 - -10 -15 -20 -25 -30 @VDD=10V, IDD=1200mA Frequency [GHz] @VDD=10V, IDD=1200mA S11 S22 S21 6.5 7 7.5 Frequency [GHz] 8 S11 S22 S21 ...

Page 9

... FMM5057X C-Band Power Amplifier MMIC 28.3 0.97 -93.8 60.4 0.93 -144.5 -131.6 0.93 -169.9 -13.7 0.94 161.7 147.8 0.88 128.6 28.6 0.56 69.6 -146.7 0.18 11.8 116.4 0.12 -12.6 97.7 0.08 -56.3 16.9 0.09 -108.2 -132.3 0.12 -137.4 -110.9 0.15 -153.7 177.5 0.18 -164.8 32.5 0.20 -173.3 -113.4 0.22 -179.1 136.3 0.23 175.6 -27.5 0.23 171.7 -159.1 0.23 169.1 -139 ...

Page 10

... FMM5057X C-Band Power Amplifier MMIC 1.0E+12 1.0E+11 1.0E+10 1.0E+09 1.0E+08 1.0E+07 1.0E+06 1.0E+05 1.0E+04 1.0E+03 1.6 Δ Δ Δ Δ Tch vs. Drain Voltage (Reference) IDD(DC)=1200mA VDD [V] MTTF vs. Tch 270 250 145 125 1.8 2 2.2 2.4 1000/Tch (1/ Tch (℃) 2.6 2.8 3 ...

Page 11

... Chip Size : 4130± ± ± ± 30um x 3230± ± ± ± 30um Chip Thickness : 70± ± ± ± 20um Bonding Pad Size : RF-Pad : 120um x 240um VDD Pad : 240um x 120um VGG Pad : 120um x 120um 11 FMM5057X C-Band Power Amplifier MMIC VDD5 3545 4130 3230 3105 ...

Page 12

... FMM5057X C-Band Power Amplifier MMIC ■ ■ ■ ■ Recommended Assembly Diagrams 0.15uF 0.15uF Note : * High isolation between VDD1 and VDD2 is needed. * “Copper” is the recommended material for the package or carrier. VGG 220pF 220pF 220pF 220pF 220pF VDD1 12 VDD3 0.15uF 220pF 220pF 0 ...

Page 13

... Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : 0.196 N ± 0.0196 N Stage Temperature : 215 deg.C ± 5 deg.C Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 1400 Duration : 150 mS/Bond FMM5057X Area of Chip Bach Surface (mm^2) 13 FMM5057X C-Band Power Amplifier MMIC ...

Page 14

... FMM5057X C-Band Power Amplifier MMIC For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: +1 408 232-9500 FAX: +1 408 428-9111 Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 ...

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