FLL200IB-1 EUDYNA [Eudyna Devices Inc], FLL200IB-1 Datasheet
FLL200IB-1
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FLL200IB-1 Summary of contents
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... FLL200IB-1, FLL200IB-2, FLL200IB-3 FEATURES • High Output Power: P 1dB = 42.5dBm (Typ.) • High Gain: G 1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) • High PAE: η add = 34% (Typ.) • Proven Reliability • Hermetically Sealed Package DESCRIPTION The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices ...
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... FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 8000 6000 4000 2000 POWER DERATING CURVE 100 100 150 Case Temperature (° =0V -0.5V -1. Drain-Source Voltage (V) 2 200 -1.5V -2.0V 10 ...
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... Download S-Parameters, click here V DS =10V I DS ≈ 0.6 I DSS f = 1.5 GHz P out 50 40 η add Input Power (dBm) 3 FLL200IB +90° 1GHz 1.9 1GHz 0° 1.1 2.5 1.3 1.2 1.5 1.4 1.3 1.4 -90° S22 ANG ...
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... FLL200IB-2 L-Band Medium & High Power GaAs FET +j50 4GHz 1.5 4GHz 1.6 +j25 1.0GHz 3.5 1.5 +j10 2.4 1.0GHz 2.3 2 50Ω 10 3.0 2.8 3.0 2.9 -j10 2.9 2.8 -j25 -j50 FREQUENCY S11 (MHZ) MAG 500 .944 1000 .937 1500 .880 1700 .791 2000 .379 2300 .309 2500 .408 2700 .480 3000 ...
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... Download S-Parameters, click here V DS =10V I DS ≈ 0.6 I DSS f = 2.6 GHz P out 50 40 η add Input Power (dBm) 5 FLL200IB +90° 2.8 2.9 4 2.6 2 1.5GHz 5.0 0.06 0.10 3.0 0° SCALE FOR | 2.9 2.3 3.1 2.0 2.2 2.1 2 ...
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... FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET 2-R 1.6±0.15 (0.063) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House ...